Patents by Inventor Jean-Marc Halbout
Jean-Marc Halbout has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6978257Abstract: A server support matrix system and method for measuring and pricing information technology services provided by small, midrange and large servers. The inventive system and method assigns capacity units to server systems based on size and applies the capacity units to categorize server systems for valuation. In addition, the inventive system and method provides for taking into account server application complexity, in the assignment of a usage type category, and different levels of support services which can be provided by the service provider. The variables of capacity unit, usage type and support service level are combined in a Server Support Matrix and are assigned costs based on their location in the matrix. The matrix allows service providers and customers to readily ascertain prospective charges and to project costs for next-generation servers.Type: GrantFiled: January 31, 2000Date of Patent: December 20, 2005Assignee: International Business Machines CorporationInventors: Jean-Marc Halbout, Stephen T. Huhn, Thomas J. Kramer, Daniel J. Mathias, Jr., Richard F. Miskovitz, Edward Plavchak, Joel Penfield Read
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Patent number: 5525828Abstract: Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity.Type: GrantFiled: August 23, 1994Date of Patent: June 11, 1996Assignee: International Business Machines CorporationInventors: Ernest Bassous, Jean-Marc Halbout, Subramanian S. Iyer, Rajiv V. Joshi, Vijay P. Kesan, Michael R. Scheuermann, Massimo A. Ghioni
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Patent number: 5501787Abstract: A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electrolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation.Type: GrantFiled: February 27, 1995Date of Patent: March 26, 1996Assignee: International Business Machines CorporationInventors: Ernest Bassous, Jean-Marc Halbout, Subramanian S. Iyer, Vijay P. Kesan
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Patent number: 5458756Abstract: A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation.Type: GrantFiled: June 27, 1994Date of Patent: October 17, 1995Assignee: International Business Machines CorporationInventors: Ernest Bassous, Jean-Marc Halbout, Subramanian S. Iyer, Vijay P. Kesan
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Patent number: 5408319Abstract: A method and apparatus for selecting an optical wavelength is provided incorporating a layer of silicon with two juxtaposed partially-reflective mirrors to provide a Fabry-Perot cavity and ohmic contacts to the silicon layer for heating the silicon layer to provide a temperature change to change its index of refraction. The invention overcomes the problem of mechanically tuning a Fabry-Perot cavity for wavelength division multiplexing (WDM).Type: GrantFiled: September 1, 1992Date of Patent: April 18, 1995Assignee: International Business Machines CorporationInventors: Jean-Marc Halbout, George V. Treyz
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Patent number: 5207585Abstract: A thin interface pellicle probe for making temporary or permanent interconnections to pads or bumps on a semiconductor device wherein the pads or bumps may be arranged in high density patterns is described incorporating an electrode for each pad or bump wherein the electrode has a raised portion thereon for penetrating the surface of the pad or bump to create sidewalls to provide a clean contact surface and the electrode has a recessed surface to limit the penetration of the raised portion. The electrodes may be affixed to a thin flexible membrane to permit each contact to have independent movement over a limited distance and of a limited rotation. The invention overcomes the problem of making easily breakable electrical interconnections to high density arrays of pads or bumps on integrated circuit structures for testing, burn-in or package interconnect and testing applications.Type: GrantFiled: October 31, 1990Date of Patent: May 4, 1993Assignee: International Business Machines CorporationInventors: Herbert P. Byrnes, Jean-Marc Halbout, Michael R. Scheuermann, Eugene Shapiro
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Patent number: 5056111Abstract: A communication system for transmitting and receiving terahertz signals has a emitter employing a resonant radiating structure connected to an ultrafast switch. The switch is a subpicosecond photoconducting switch coupled to a coplanar transmission line having a pair of approximately 1 micron wide A1 lines deposited on an SOS substrate. The transmission line is separated from the tip of the radiating structure by a photoconducting gap forming the switch and is driven by a laser pulse. Utilizing the gap excitation principle, the transmitting antenna radiates a freely propagating signal that may be received by an identical structure either on the same or on different substrates.Type: GrantFiled: August 9, 1988Date of Patent: October 8, 1991Assignee: IBM CorporationInventors: Irl N. Duling, III, Daniel R. Grischkowsky, Jean-Marc Halbout, Mark B. Ketchen
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Patent number: 5019707Abstract: Stroboscopic voltage measurements are effected within a short time window with very high spatial resolution using a tunneling microscope. Sampling the tunneling current is implemented by modulating the distance between the tunneling tip and a conductor which carries the waveform to be sampled. In one embodiment, the tunneling tip is mounted on a crystal oscillator to modulate the separation between the tunneling tip and the conductor. As an alternative, an acoustic modulator is used to produce mechanical motion in the surface of the sample in order to modulate the distance between the sample and the tunneling tip.Type: GrantFiled: March 23, 1989Date of Patent: May 28, 1991Assignee: International Business Machines CorporationInventors: George L. Chiu, Jean-Marc Halbout
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Patent number: 4851767Abstract: A testing or sampling probe to determine the response of electrical circuits or devices to ultrafast electrical pulses. The probe is detachable from the device being tested. The probe includes a transparent substrate though which optical pulses are focused or directed onto a photoconducting gap. The probe further includes a transmission line associated with the photoconductive gap, and which terminates at a tapered end of the probe in contacts which are placed on the device under test.Type: GrantFiled: January 15, 1988Date of Patent: July 25, 1989Assignee: International Business Machines CorporationInventors: Jean-Marc Halbout, Mark B. Ketchen, Paul A. Moskowitz, Michael R. Scheuermann
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Patent number: 4485473Abstract: An amplitude modulator for a tunable ring cavity dye laser is disclosed. The modulator is operated in time synchronization with the laser pump and is located assymetrically within the ring to attenuate dye laser pulses in one direction while passing pulses in the opposite direction, thereby producing a mode locked unidirectional travelling wave. The use of a low dispersion electro-optical modulator in a dye laser yields subpicosecond optical pulses with wide tunability.Type: GrantFiled: April 29, 1982Date of Patent: November 27, 1984Assignee: Cornell Research Foundation, Inc.Inventors: Chung L. Tang, Nils A. Olsson, Jean-Marc Halbout