Abstract: A process for forming a flux of atoms of an element which includes the forming of a target made up of the element and the irradiation of the target by a pulsed laser whose energy density per pulse is equal to or greater than the emission threshold of the atoms of the elements, but which energy density is below the ablation threshold of either one of the element or the compound which forms the target. The process also relates to the deposition of an insulating, semiconductor or metallic layer of an element or a binary, ternary or quaternary compound which is optionally doped and which utilizes the steps of a heating of a substrate and the growing on the heated substrate of an epitaxial layer of either the element or the compound from at least one atomic flux. The atomic flux is produced by irradiating of a target through the use of a pulsed laser.