Abstract: A CCD shift register having a reading device, or charge/voltage conversion device, at one end. This reading device or charge/voltage conversion device includes a diode, a precharging transistor, and an amplifier with high input impedance. To improve the efficiency of the charge transfer and, more generally, the behavior of the register, especially at high frequencies, it is proposed to shape the final gate of the register, and the diode, in such a way that the width along which the gate is adjacent to the diode (i.e. the width along which the end of the channel is adjacent to the diode) is great while, at the same time, the diode surface area is kept small.

Abstract: A layer of thickness x.sub.j is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x.sub.1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x.sub.3, with x.sub.1 <x.sub.j. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.

Abstract: Method for the manufacture of light emitting and/or photodetective diodes, wherein it comprises the following operations:(a) starting with a substrate of the material Mg.sub.x Zn.sub.1-x Te;(b) a means which will make this material conductive is applied thereto;(c) a layer of thickness x.sub.j is applied to the surface of this substrate and which is compensated in such a way that it has a high resistivity;(d) ions are implanted with a sufficient energy to create a trapping zone of thickness x.sub.1 in the semi-conductor surface and above it an insulating zone of thickness x.sub.2 with x.sub.1 <x.sub.j ;(e) conductive contacts are formed on the substrate surface and on its second face.Light emitting and/or photodetective diodes and diode matrixes obtained by this method.

Abstract: A method of preparation of a ternary or quaternary alloy composed of the elements A.sup.1 A.sup.2 A.sup.3 (ternary alloy) or the elements A.sup.1 A.sup.2 A.sup.3 A.sup.4 (quaternary alloy) consists of the successive steps of preparation of one or a number of binary alloys such as A.sup.1 A.sup.2, purification of the binary alloys by zone melting, placing of the binary alloy or alloys which are in the solid state together with the other constituent elements of the alloy within a container in the presence of a solvent, crystallization of the ternary or quaternary alloy by melting all the elements within the container and recrystallization in the presence of the solvent.

Abstract: A wafer of the semiconducting compound ZnTe is subjected to at least one bombardment by a magnesium ion flux, the energy and density of the bombardment or bombardments being such as to obtain a desired concentration of magnesium ions in the portion of the semiconductor to be doped and this is followed by a thermal annealing operation, the concentration of magnesium being such as to obtain an alloy having the formula Mg.sub.X Zn.sub.1.sub.-X Te with 0<X<1.