Patents by Inventor Jean Michailos

Jean Michailos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for fabricating an integrated circuit including a capacitor with a copper electrode
    Patent number: 7501291
    Abstract: The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: March 10, 2009
    Assignee: STMicroelectronics SA
    Inventors: Michael Gros-Jean, Nicolas Casanova, Jean Michailos
  • PROCESS FOR FABRICATING AN INTEGRATED CIRCUIT INCLUDING A CAPACITOR WITH A COPPER ELECTRODE
    Publication number: 20060240576
    Abstract: The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.
    Type: Application
    Filed: April 19, 2006
    Publication date: October 26, 2006
    Applicant: STMicroelectronics SA
    Inventors: Michael Gros-Jean, Nicholas Casanova, Jean Michailos
  • Process and device for producing a layer of tantalum pentoxide on a carrier material, in particular titanium nitride, and integrated circuit incorporating a layer of tantalum pentoxide
    Publication number: 20040187778
    Abstract: Carrier material (PL) is heated (MCH) to a heating temperature of between 200° C. and 400° C. and a gas mixture (MG) including tert-butyliminotris (diethylamino) tantalum (t-BuN=Ta(NEt2)3) is circulated in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material. The partial pressure of the tert-butyliminotris (diethylamino) tantalum is preferably greater than or equal to 25 mTorr.
    Type: Application
    Filed: November 24, 2003
    Publication date: September 30, 2004
    Applicant: STMICROELECTRONICS S.A.
    Inventors: Mickael Gros-Jean, Nicolas Jourdan, Jean Michailos