Abstract: In order to give the current the quality of low sensitivity to temperature, a first MOS transistor and a second MOS transistor supplied by a current mirror have their sources connected to the ground, with the drain and the gate of the first transistor being connected to the gate of the second transistor by means of a resistor. The quotient of the dimensional ratios of the transistors is equal to the coefficient of the current mirror and the transistors are doped so that the threshold of the second transistor is greater than that of the first one. Application notably to ramp generators for the programming of EEPROM cells.