Abstract: The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first thyristor, on the front side of the component, corresponding to a first N-type region (6) formed in a first P-type box (5), the first box corresponding to a first electrode (A2) of the second thyristor, the first box containing a second N-type region (8); and a pilot structure comprising, above an extension of a second electrode region (4) of the second thyristor, a second P-type box (11) containing third and fourth N-type regions, the third region (12) and a portion of the second box (11) being connected to a gate terminal (G), the fourth region (13) being connected to the second region (8).

Abstract: The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first thyristor, on the front side of the component, corresponding to a first N-type region (6) formed in a first P-type box (5), the first box corresponding to a first electrode (A2) of the second thyristor, the first box containing a second N-type region (8); and a pilot structure comprising, above an extension of a second electrode region (4) of the second thyristor, a second P-type box (11) containing third and fourth N-type regions, the third region (12) and a portion of the second box (11) being connected to a gate terminal (G), the fourth region (13) being connected to the second region (8).

Abstract: The present invention relates to a bidirectional breakover component including a lightly-doped N-type substrate, an upper P-type region extending over practically the entire upper surface of the component except its circumference, a lower P-type uniform layer on the lower surface side of the component, substantially complementary N-type regions respectively formed in the upper region and in the lower layer, a peripheral P-type well, an overdoped P-type region at the upper surface of the well, and lightly-doped N-type regions between the circumference of the upper region and the well.

Abstract: The present invention relates to a bidirectional breakover component including a lightly-doped N-type substrate, an upper P-type region extending over practically the entire upper surface of the component except its circumference, a lower P-type uniform layer on the lower surface side of the component, substantially complementary N-type regions respectively formed in the upper region and in the lower layer, a peripheral P-type well, an overdoped P-type region at the upper surface of the well, and lightly-doped N-type regions between the circumference of the upper region and the well.

Abstract: A monolithic assembly of thyristors having a common cathode and a single gate includes a lightly-doped substrate, several anode regions, on the front surface side, a cathode gate layer on the rear surface side of the substrate, a cathode layer on the rear surface side of the layer coated with a cathode metallization, a well extending from the front surface to the layer, a gate metallization formed on the upper surface of the well, and means for increasing the leakage resistance between the cathode layer and the cathode gate layer.