Abstract: The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G1), first (Th1) and second (Th2) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region (6), and a metallization (A1, A2) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.

Abstract: A detector of the state (on or off) of a vertical power component formed in a lightly-doped semiconductor substrate of a first conductivity type having a front surface and a rear surface. The region corresponding to the power component is surrounded with an isolating wall of opposite type to that of the substrate. This state detector is formed outside of said region and is formed with a vertical detection component, the state of which is switched by parasitic charges propagating outside of the isolating wall when the power component is on.

Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

Abstract: A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.

Abstract: A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.

Abstract: The present invention relates to a switchable d.c. voltage regulation circuit having an input terminal, an output terminal, a reference terminal, and a control terminal, including a gate turn-off thyristor, the main terminals of which are connected to the input terminal and to the output terminal, respectively; a resistor connected between the input terminal and the cathode gate of the thyristor; a transistor, the main terminals of which are connected to the cathode gate of the thyristor and to the reference terminal, respectively; and an avalanche diode connected between the output terminal and the base of the transistor.

Abstract: A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.