Abstract: A method and device for managing a wireless resource are useful for securely transmitting data in a wireless communication network. The method includes receiving at a target wireless communication device an encrypted identification of a relaying wireless communication device, an encrypted payload decryption key, and an encrypted payload. The encrypted identification is then decrypted using an identification decryption key stored in a memory of the target wireless communication device, and the decrypted identification is used to authenticate the relaying wireless communication device. The encrypted payload decryption key is decrypted using a key decryption key stored in a memory of the target wireless communication device and a decryption algorithm stored in a memory of the target wireless communication device, which provides a decrypted payload decryption key. The encrypted payload is then decrypted using the decrypted payload decryption key.

Abstract: A detector or a modulator for converting between optical and radio frequency signals comprising an optical guide (11 to 14) for propagating two optical signal components having frequencies that differ by an amount corresponding to a radio frequency and a microstrip radio signal guide (15, 16) for propagating a radio signal at the radio frequency, the microstrip radio signal guide being in travelling-wave coupling with an interaction one (14) of the optical guide comprising material in which interaction between the optical signal components and the radio signal occur. The microstrip radio signal guide element (15, 16) comprises an electrically conductive strip (15) juxtaposed with and extending along the interaction zone (14) on one side thereof and an electrically conductive ground plane (16) juxtaposed with and extending along the interaction zone (14) on an opposite side thereof.

Abstract: A detector or a modulator for converting between optical and radio frequency signals comprising an optical guide (11 to 14) for propagating two optical signal components having frequencies that differ by an amount corresponding to a radio frequency and a microstrip radio signal guide (15, 16) for propagating a radio signal at the radio frequency, the microstrip radio signal guide being in travelling-wave coupling with an interaction one (14) of the optical guide comprising material in which interaction between the optical signal components and the radio signal occur. The microstrip radio signal guide element (15, 16) comprises an electrically conductive strip (15) juxtaposed with and extending along the interaction zone (14) on one side thereof and an electrically conductive ground plane (16) juxtaposed with and extending along the interaction zone (14) on an opposite side thereof.

Abstract: A system for monitoring the discharging/charging cycles of a rechargeable battery which includes adaptive calculation means for providing a predictive indication of when the battery will reach a critical discharge voltage. The adaptive calculation means includes parameters which can be modified by other adaptive calculation means so as to optimize the monitor's performance depending on the battery's actual use. The adaptive calculation means may be neural networks formed by a microprocessor and memory, and the monitor system may be coupled to a host system.

Abstract: System for monitoring the discharging/charging cycles of a rechargeable battery which includes adaptive calculation means for providing a predictive indication of when the battery will reach a critical discharge voltage. The adaptive calculation means includes parameters which can be modified by other adaptive calculation means so as to optimize the monitor's performance depending on the battery's actual use. The adaptive calculation means may be neural networks formed by a microprocessor and memory, and the monitor system may be coupled to a host system.

Abstract: A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.30 doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (b 12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.

Abstract: This fast-access data storage circuit is made of a semiconductor material with a two-dimensional carrier gas between two of its layers. The material is rendered superconducting by a suitable choice of the temperature and magnetic field conditions. The circuit is formed by a plurality of memory cells, each of which is formed by two selection transistors, a semiconductor loop, ohmic contacts and a grid which is arranged on the loop and one of the contacts. The superconductivity reduces the access time. One selection controls the reading of data or the writing of a state "1" in the loop, while the other selection transistor controls the cancellation of the data and hence the writing of a state "0" by means of the grid arranged on the loop.

Abstract: A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.+ doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.

Abstract: This circuit comprising conductive lines for the transfer of high-speed signals is formed from a semiconductor material in the presence of a two-dimensional gas 2DG between two of its layers (3 and 4). By a suitable choice of the conditions of the temperature and of the magnetic field B, it is then made superconducting, thus permitting the transport of high-speed signals without delay and without distortion of the signals.