Abstract: A thermal capacitor component which includes, on a substrate, a stack of different layers defined in the form of a mesa terminating at its upper part in an electrical contact layer, which layer is coated with an electrically and thermally conducting layer surmounted by a heat sink element in contact with the conducting layer. The heat sink element has a plane shape. In addition, the component has at least one pad including another stack of layers which is also coated with an electrically and thermally conducting layer. The heat sink element is also in contact with the conducting layer of this stack so as to conduct the heat from the heat sink element into the substrate. Such a thermal capacitor may find application in the cooling of semiconductor components.

Abstract: A semiconductor laser source, including a stack of semiconductor laser diodes each including at least one active region. The active region includes a series of semiconductor layers located between an ohmic contact layer and a substrate which also assumes the function of an ohmic contact layer. Pressure keeps the diodes in contact with one another by way of their ohmic contact layers. Each diode has dimensions, especially in their thickness, so that the transient heating in each diode is as small as possible and so that the average heating in the stackable diodes does not exceed a predetermined value.

Abstract: A laser diode having an active layer which has a composition:Ga.sub.x In.sub.1-x Pwith: 0.51.ltoreq.x.ltoreq.0.53 corresponding to a point of the straight line of the quaternary diagram GaInAsP which satisfies the condition of compatability of the crystal lattice parameter with that of a GaAs substrate. The confinement layers of the laser diode have a composition corresponding to a point of the straight line of the adjacent quaternary diagram GaAlInP which satisfies the condition of compatability of the crystal lattice parameter with that of the GaAs substrate, namely in respect of that point of said straight line which is located at the most favorable end of the line:In.sub.z Al.sub.1-z Pwith: 0.45.ltoreq.z.ltoreq.0.49.

Abstract: A process and an apparatus for epitaxy in a gaseous phase, producing thin and homogeneous layers of monocrystalline indium phosphide. The process comprises two steps. In the first step, the phosphine is decomposed in a pyrolysis chamber which extends through a kiln in accordance with the reaction: ##EQU1## Thereafter, in a second step, the phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen: ##EQU2## The residual gases are drawn off by a vacuum pump.

Abstract: A junction-type field-effect structure has an active layer covered at least in part by a dielectric layer. A metal base is applied to the dielectric layer.