Abstract: The invention relates to a circuit (100) able to achieve simultaneous impedance matching between a generator (G) and a load (CH) for a power supply signal comprising at least two distinct frequencies.

Abstract: A method for generating an ion flow asymmetry in a capacitively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.

Abstract: A method for generating an ion flow asymmetry in a capactively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.

Abstract: A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability.

Abstract: A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.

Abstract: A matching circuit is provided to adapt electrical impedance simultaneously for at least one pair of a higher and a lower frequencies between a plasma reactor and a generator; said matching circuit comprises at least a “load and tune” L-type stage, and includes a “tune circuit” connected in series to the plasma reactor and having at least one of or both an inductor and a capacitor in series; a “load circuit” connected in parallel to the series-connected “tune circuit” and load, and comprising at least one of or both an inductor and a capacitor in parallel; and the component values of the tune and load circuits are chosen such that, for the lower frequency, the matching circuit follows a negative load reactance path in a Smith chart, and for the higher frequency, the matching circuit follows a positive load reactance path in the Smith chart.

Abstract: A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.

Abstract: A system includes a probe arranged in a plasma processing chamber of the plasma processing system. A capacitor has one end connected to the probe. An RF source is configured to selectively supply an RF signal including RF bursts to another end of the capacitor. A plasma characterizing computing device is configured to collect a set of process data from the probe by measuring current supplied to the capacitor and voltage at the capacitor; identify a relevancy range for the set of process data, wherein the relevancy range includes process data collected after the capacitor begins discharging and before the capacitor is fully discharged; determine a set of seed values based on the process data in the relevancy range; and employ the relevancy range and the set of seed values as initial values for curve fitting corresponding to the one of the RF bursts to reduce a number of curve-fitting iterations.

Abstract: An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.

Abstract: A method for automatically characterizing plasma during substrate processing is provided. The method includes collecting a set of process data, which includes at least data about current and voltage. The method also includes identifying a relevancy range for the set of process data, wherein the relevancy range includes a subset of the set of process data. The method further includes determining a set of seed values. The method yet also includes employing the relevancy range and the set of seed values to perform curve-fitting, wherein the curve-fitting enables the plasma to be automatically characterized.

Abstract: A method for identifying a signal perturbation characteristic of a dechucking event within a processing chamber of a plasma processing system is provided. The method includes executing a dechucking step within the processing chamber to remove a substrate from a lower electrode, wherein the dechucking step includes generating plasma capable of providing a current to neutralize an electrostatic charge on the substrate. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the dechucking step. The probe head is on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the electrostatic charge is removed from the substrate and the signal perturbation characteristic of the dechucking event is detected.

Abstract: An arrangement for measuring process parameters within a processing chamber is provided. The arrangement includes a probe arrangement disposed in an opening of an upper electrode. Probe arrangement includes a probe head, which includes a head portion and a flange portion. The arrangement also includes an o-ring disposed between the upper electrode and the flange portion. The arrangement further includes a spacer made of an electrically insulative material positioned between the head portion and the opening of the upper electrode to prevent the probe arrangement from touching the upper electrode. The spacer includes a disk portion configured for supporting an underside of the flange portion. The spacer also includes a hollow cylindrical portion configured to encircle the head portion. The spacer forms a right-angled path between the o-ring and an opening to the processing chamber to prevent direct line-of-sight path between the o-ring and the opening to the processing chamber.

Abstract: A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.

Abstract: A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract: A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability.

Abstract: A processing system for detecting in-situ arcing events during substrate processing is provided. The processing systems includes at least a plasma processing chamber having a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The probe arrangement also includes a detection arrangement that is coupled to a second plate of the measuring capacitor, wherein the detection arrangement is configured for converting an induced current flowing through the measuring capacitor into a set of digital signals, which is processed to detect the in-situ arcing events.

Abstract: A processing system having a chamber for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra is provided. The processing chamber includes a confinement ring assembly, a flash lamp, and a set of quartz windows. The processing chamber also includes a plurality of collimated optical assemblies, the plurality of collimated optical assemblies are optically coupled to the set of quartz windows. The processing chamber also includes a plurality of fiber optic bundles. The processing chamber also includes a multi-channel spectrometer, the multi-channel spectrometer is configured with at least a signal channel and a reference channel, the signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.

Abstract: An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.

Abstract: A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves.

Abstract: A method for identifying a stabilized plasma within a processing chamber of a plasma processing system is provided. The method includes executing a strike step within the processing chamber to generate a plasma. The strike step includes applying a substantially high gas pressure within the processing chamber and maintaining a low radio frequency (RF) power within the processing chamber. The method also includes employing a probe head to collect a set of characteristic parameter measurements during the strike step, the probe head being on a surface of the processing chamber, wherein the surface is within close proximity to a substrate surface. The method further includes comparing the set of characteristic parameter measurements against a pre-defined range. If the set of characteristic parameter measurements is within the pre-defined range, the stabilized plasma exists.