Abstract: A method for determining an oxygen concentration of a powder of a metallic material taking the form of a powder bed, the method includes steps consisting in: A) producing an image of at least a part of the powder bed, the image comprising a set of pixels, a pixel having a colour coded in accordance with a colorimetric code comprising three quantities, B) determining the oxygen concentration of the powder from values of the three quantities associated with pixels of the image using a predefined calibration function, a function of the material, and linking the oxygen concentration and the three quantities.

Abstract: Method for manufacturing an aluminium alloy part by additive manufacturing comprising a step during which a layer of a mixture of powders is locally melted and then solidified, characterised in that the mixture of powders comprises: first particles comprising at least 80% by mass of aluminium and up to 20% by mass of one or more additional elements, and second yttria-stabilized zirconia particles, the mixture of powders comprising at least 1.5% by volume of second particles.

Abstract: A method for manufacturing an aluminium alloy part by additive manufacturing comprising a step during which a layer of a mixture of powders is melted locally and then solidified, wherein the mixture of powders comprises: —first particles—comprising at least 80 wt % of aluminium and up to 20 wt % of one or more additional elements, and —second particles—of yttria, the volume percentage of second particles in the mixture of powders preferably ranging from 0.5% to 5%.

Abstract: Method for manufacturing an aluminium alloy part by additive manufacturing comprising a step in which a layer of a mixture of powders is locally melted then solidified, wherein the mixture of powders comprises: first particles comprising at least 80 wt. % aluminium and up to 20 wt. % one or more additional elements, and second particles of ZrSi2, the mixture of powders comprising 1.8 wt. % to 4 wt. % second particles.

Abstract: Method for manufacturing an aluminium alloy part by additive manufacturing comprising a step during which a layer of a mixture of powders is locally melted and then solidified, characterised in that the mixture of powders comprises: first particles comprising at least 80% by mass of aluminium and up to 20% by mass of one or more additional elements, and second yttria-stabilized zirconia particles, the mixture of powders comprising at least 1.5% by volume of second particles.

Abstract: A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called “barrier” layer having silica and one or more material(s) X selected from among SiC, Si, Si3N4, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.

Abstract: A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k?/(2?k) (E), wherein k? is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.

Abstract: A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.

Abstract: The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.

Abstract: The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath (100) including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers (101) and p-doped silicon layers (102); and (iii) cutting a slice (104), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer (10).

Abstract: A method for preparing silicon substrate having average crystallite size greater than or equal to 20 ?m, including at least the steps of: (i) providing polycrystalline silicon substrate of which average grain size is less than or equal to 10 ?m; (ii) subjecting substrate to overall homogeneous plastic deformation, at temperature of at least 1000° C.; (iii) subjecting substrate to localized plastic deformation in plurality of areas of substrate, called external stress areas, spacing between two consecutive areas being at least 20 ?m, local deformation of substrate being strictly greater than overall deformation carried out in step (ii); step (iii) being able to be carried out subsequent to or simultaneous to step (ii); and (iv) subjecting substrate obtained in step (iii) to recrystallization heat treatment in solid phase, at temperature strictly greater than temperature used in step (ii), in order to obtain desired substrate.

Abstract: A multilayer structure including a substrate and a first stack of a layer of SiO2 and a layer of material of the SiOxNyHz type positioned between the substrate and the layer of SiO2, in which the layer of SiO2 and the layer of material of the SiOxNyHz type have thicknesses (eB, eA) such that the thickness of the layer of SiO2 is less than or equal to 60 nm, the thickness of the layer of material of the SiOxNyHz type (eB) is more than twice the thickness (eA) of the layer of SiO2, and the sum of the thicknesses of the layer of SiO2 and of the layer of material of the SiOxNyHz type is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.

Abstract: A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of the crucible, for materialising the position of at least one seed designed to be positioned at the bottom of the crucible, the seed including at least first and second surfaces orthogonal to the bottom of the crucible. The respective positions of at least two of the marks on at least one of the side walls define, in the crystalline material, a first cutting plane tangent to the first surface of the seed and a second cutting plane tangent to the second surface of the seed.

Abstract: A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.

Abstract: The restoration device of least one silicon-based photovoltaic solar cell includes a support of the cell, a heat source configured to heat the photovoltaic solar cell, and unit for generating charge carriers in the cell. To better accelerate the restoration kinetics of the solar cell, the device includes an ultrasonic transducer designed to generate ultrasonic waves propagating in the photovoltaic solar cell.

Abstract: The invention relates to a method for wire cutting of a material, wherein a cutting wire is advanced into the material by causing said wire to scroll in such a way as to progressively cut the material, the method being characterised in that it comprises: the measurement of a force applied by the wire on the material as a function of time, the measurement of the advancement of the wire in the material as a function of time, the determination, as a function of said force and said advancement of the wire, of a variable characterising the state of the wire cutting and, servo control of at least one cutting parameter through changes in said variable so as to reduce the rate of wear of the wire and/or to reduce the risk of breaking of the wire. The invention also relates to a device for wire cutting allowing implementation of said method.

Abstract: The invention relates to a process of use for deoxidizing silicon particles comprising at least the steps consisting in: (i) having surface-oxidized silicon particles that have a mean size of less than or equal to 10 ?m, (ii) formulating said particles into the form of aggregates having a mean size ranging from 20 to 300 ?m, (iii) bringing said aggregates from step (ii) into contact with a thermal plasma conveying hydrogen radicals under conditions suitable for the deoxidation thereof and for the non-evaporation thereof, and (iv) recovering a material deoxidized according to step (iii) in a liquid silicon bath.

Abstract: A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.