Abstract: A photovoltaic cell comprises a first layer of a first absorber material (1) comprising a front face, a rear face on which first contact electrodes having first polarity (101) are interdigitated with the second contact electrodes having second polarity (102), a second layer of a second absorber material (2), above the first layer, comprising a front face, of third contact electrodes having second polarity (203) being placed on the front face of the second layer, the first and second semiconductor materials having electron affinities and bandgap widths such that the carriers having the first polarity pass between the first and second layer and are collected from the first and second layers by the first electrodes (101), the carriers of second polarity are collected from the first layer by the second electrodes (102), and the carriers of second polarity are collected from the second layer by the third electrodes (203).

Abstract: A photovoltaic cell comprises a first layer of a first absorber material (1) comprising a front face, a rear face on which first contact electrodes having first polarity (101) are interdigitated with the second contact electrodes having second polarity (102), a second layer of a second absorber material (2), above the first layer, comprising a front face, of third contact electrodes having second polarity (203) being placed on the front face of the second layer, the first and second semiconductor materials having electron affinities and bandgap widths such that the carriers having the first polarity pass between the first and second layer and are collected from the first and second layers by the first electrodes (101), the carriers of second polarity are collected from the first layer by the second electrodes (102), and the carriers of second polarity are collected from the second layer by the third electrodes (203).

Abstract: A method of manufacturing a diamond UV sensor element improved with a UV/visible light blind ratio using a diamond single crystal as a light receiving portion and detecting a light based on the change of electric resistance caused by a light irradiated to the light receiving portion is provided, the method, including (1) a step of hydrogenating the surface of the diamond single crystal in an atmosphere substantially containing hydrogen, and (2) a step of forming a light receiving portion by exposing the hydrogenated surface of the diamond single crystal into an atmosphere containing ozone or active oxygen.

Abstract: The invention specifically concerns a device for varying the apparent level of a capacitance, said device being characterized in that it compromises: —a dipole (1) of a type known per se, comprising a semiconductor material (4) for electronic transfer via hopping situated between a first electrode (2) and a second electrode (6), with said dipole (1) situated parallel to said capacitance (12); —a continuous voltage generator (13) electrically connected to the second electrode (6) and the first electrode (2) of the dipole (1); —and a means for varying the voltage generated by the generator (13).

Abstract: A method of manufacturing a diamond UV sensor element improved with a UV/visible light blind ratio using a diamond single crystal as a light receiving portion and detecting a light based on the change of electric resistance caused by a light irradiated to the light receiving portion is provided, the method, including (1) a step of hydrogenating the surface of the diamond single crystal in an atmosphere substantially containing hydrogen, and (2) a step of forming a light receiving portion by exposing the hydrogenated surface of the diamond single crystal into an atmosphere containing ozone or active oxygen.

Abstract: The invention specifically concerns a device for varying the apparent level of a capacity, said device being characterized in that it compromises: —a dipole (1) of a type known per se, comprising a semiconductor material (4) for electronic transfer via hopping situated between a first electrode (2) and a second electrode (6), with said dipole (1) situated parallel to said capacity (12); —a continuous voltage generator (13) electrically connected to the second electrode (6) and the first electrode (2) of the dipole (1); —and a means for varying the voltage generated by the generator (13).

Abstract: Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon. The invention also relates to a method for the making of the latter.

Abstract: Assembly of sensors formed as an imager with a detection brick including a photosensitive material, a brick for addressing and optionally processing signals from the sensor(s), an interconnection brick located between the detection brick and the addressing brick, this brick including connection pads, characterized in that the photosensitive material of the detection brick contains polymorphous silicon. The invention also relates to a method for the making of the latter.