Abstract: A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.

Abstract: A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.

Abstract: A method for the continuous vacuum cleaning of a substrate, characterized in that: a species is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; using at least one linear ion source, a plasma is generated from a gas mixture comprising predominantly the species having a low sputtering efficiency, especially one based on oxygen; and at least one surface portion of the substrate is subjected to the plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on the surface portion.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.

Abstract: Method for the continuous vacuum cleaning of a substrate, characterized in that: a species is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; using at least one linear ion source, a plasma is generated from a gas mixture comprising predominantly the species having a low sputtering efficiency, especially one based on oxygen; and at least one surface portion of said substrate is subjected to said plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on said surface portion.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.

Abstract: The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.

Abstract: The subject of the invention is a transparent substrate (1), in particular a glass substrate, including a coating (6) of one or more thin films on at least one of its faces, comprising at least one A film containing an aluminum fluoride or aluminum oxyfluoride Al.sub.x O.sub.y F.sub.z, with y.gtoreq.0.

Abstract: This invention relates to a process and a device for the deposition of thin layers on a substrate using a plasma-CVD technique. The substrate itself, which previously has been made conductive by the deposition of conductive layers, is used as an electrode to create the discharge. In particular, the technique can be applied to the deposition of organosilicon layers on glass plates of large dimensions. The invention also relates to a glass substrate covered by thin layers including at least one metal layer, in particular silver, on which the organosilicon layer is deposited according to the process.

Abstract: A logic circuit family derived from the conventional 2 level single-ended cascode logic circuit. The basic logic circuit performing a 2--2 OA/AI logic function shown in the attached drawing is given for illustration purposes. It comprises: a logic tree 35 comprised of top and bottom stages 37, 36 dotted at the tree output 38 to perform a determined logic function; the top stage 37 includes a current switch comprised of two input transistors TX34, TX35 connected in a differential amplifier configuration with a reference transistor TX36. The bases of input transistors TX34, TX35 are provided with at least two level shifter devices. Preferably, input level shifter devices are Schottky diodes P31, . . . which move the voltages towards the more positive voltage VPP, to add an AND function on each of these input transistors.

Abstract: A latch that can serve as a bit storage cell in a random-access store. The latch includes an AND gate (diodes D1 and D2) the input IN of which receives the bit to be stored and the other input of which is connected to a write control line WRL. When no write operation is being performed, transistor T1 is turned off and the state of transistor T2 is dependent on output potential OUT. To perform a write operation, line WRL is activated (goes high) and the state of transistor T3 will depend on the value of the bit applied to input IN. Read operations are performed by means of another AND gate (diodes D4 and D5) and an emitter follower (transistor T4) connected via a bit line BL to an output circuit 2. By adding input transistors and emitter followers to the latch, a multi-port storage can be realized, several rows of which can be simultaneously written into and/or read out.