Abstract: A non-volatile random access memory (NVRAM) of the type with magnetoresistive memory elements (1) connected by sets of non-intersecting conductor sense lines (3, 4) which define the address of each memory element (1) and are connectable to a magnetic write/read recording unit. The memory elements are a plurality of magnetoresistive submicron dots or wires (1) embedded in a membrane (2) through which the submicron dots or wires extend. The sets of non-intersecting conductor sense lines (3, 4) are connected to the opposite ends of the submicron dots or wires (1) on opposite sides of the membrane.

Abstract: A process for the production of a conductive layer on a substrate, said conductive layer comprising a network of crystal needles of conductive radical cation salts based on tetrathiotetracenes, tetraselenotetracenes or tetratellurotetracenes and chlorine, bromine, iodine or copper dichloride, and said network is embedded in a polymer matrix, by coating at least one side of said substrate with a) a suspension of crystal needles of the radical cation salts of formula I in an inch solvent which may additionally contain a thermoplastic polymer or at least one starting compound for a thermosetting polymer, or b) a solution (b1) of a tetrathiotetracene, tetraselenotetracene or tetratellurotetracene, (b2) of a monomeric, oligomeric or polymeric organic compound which contains chlorine, bromine or iodone and, when heated with these tetracenes, forms a radical cation salt, or of anhydrous CuCl.sub.2, a CuCl.sub.2 aquo complex or a CuCl.sub.