Abstract: The present invention relates to methods of manufacturing a structure having semi-conductor material nanocrystals on a dielectric material substrate by chemical vapour deposition (CVD), the method including at least: i) contacting a surface of a dielectric layer present on a substrate with a first gaseous precursor, by CVD, to form nanocrystal nuclei on the surface of a the dielectric layer; ii) contacting the nanocrystal nuclei with a second gaseous precursor, by CVD, to selectively deposit nanocrystal semi-conductor material only on the nuclei and to grow nanocrystals on the nuclei, each nanocrystal having an exposed surface; and iii) forming a nitride layer only on the exposed surface of each nanocrystal by contacting the nanocrystals with a mixture including at least the second gaseous precursor and a third gaseous precursor to terminate the growth of said nanocrystals and to selectively and stoichiometrically deposit the nitride layer on the exposed surface, wherein a material of said nanocrystal nuclei

Abstract: The invention relates to a manufacturing method for a structure comprising semi-conductor material nanocrystals on a dielectric material substrate by chemical vapour deposition (CVD), the nanocrystals being covered by a layer of semi-conductor material nitride. The method comprises a step for forming stable nuclei on the substrate by CVD from a first gaseous precursor of the nuclei; a step of nanocrystal growth from stable nuclei by CVD from a second gaseous precursor; and a step for forming a layer of semi-conductor material nitride on the nanocrystals. The method is characterised in that the passivation step is carried out by selective and stoichiometric CVD of semi-conductor material nitride only on the nanocrystals from a mixture of the second and a third gaseous precursor selected to cause selective and stoichiometric deposition of the nitride only on said nanocrystals, wherein steps for forming the nuclei, forming the nanocrystals and passivation are carried out inside a same, single chamber.

Abstract: The invention relates to a manufacturing method for a structure comprising semi-conductor material nanocrystals on a dielectric material substrate by chemical vapour deposition (CVD), the nanocrystals being covered by a layer of semi-conductor material nitride. The method comprises a step for forming stable nuclei on the substrate by CVD from a first gaseous precursor of the nuclei; a step of nanocrystal growth from stable nuclei by CVD from a second gaseous precursor; and a step for forming a layer of semi-conductor material nitride on the nanocrystals. The method is characterised in that the passivation step is carried out by selective and stoichiometric CVD of semi-conductor material nitride only on the nanocrystals from a mixture of the second and a third gaseous precursor selected to cause selective and stoichiometric deposition of the nitride only on said nanocrystals, wherein steps for forming the nuclei, forming the nanocrystals and passivation are carried out inside a same, single chamber.