Abstract: The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere specifically, by utilizing a neutral gas in the initial transport reaction and subsequently introducing hydrogen into the gaseous mixture in the immediate vicinity of the substrate. The temperature in the epitaxial space is homogeneous and low (600.degree. C) and the qualities of the deposited layers are considerably improved.

Abstract: A window for an electron tube formed by a semiconductor device having a support of monocrystalline oxide, by a connection layer formed by a barium- or calcium-boroaluminate, by at least one passivating layer, and by an active layer having a constant composition and formed by a semiconductor material of the p-conductivity type.

Abstract: A method of epitaxially growing a monocrystalline layer on a substrate that is oxidizable in air in which an epitaxial layer of the oxidizable material is grown on a support of a monocrystalline material having the desired crystalline structure, enough of the support material is then removed to enable removal by etching of the support from the layer of the oxidizable material, the support and attached layer are then introduced into a non-oxidizing atmosphere where the support is etched away from the layer of the oxidizable material and a monocrystalline layer of another material is grown by epitaxial deposition on the exposed surface of the surface of the layer of the oxidizable material exposed by etching.