Patents by Inventor Jean Philippe Jacquemin

Jean Philippe Jacquemin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor substrate temperature determination
    Patent number: 8066430
    Abstract: The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the resonance circuit (110) is irradiated with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A resonance frequency of the resonance circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated electromagnetic field (5), and a temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: November 29, 2011
    Assignee: NXP B.V.
    Inventors: Srdjan Kordic, Meindert M. Lunenborg, Jean-Philippe Jacquemin
  • Method of adhesion measurement at the interface between layers
    Patent number: 7765861
    Abstract: The strength of adhesion between two layers is evaluated by applying a series of laser shocks directly to the surface of one of the layers. Adhesion strength is determined based on the wavelength and energy of the laser pulse creating the shock which causes rupture of the interface between the two layers.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: August 3, 2010
    Assignee: NXP B.V.
    Inventor: Jean Philippe Jacquemin
  • Method of adhesion measurement at the interface between layers
    Publication number: 20090241656
    Abstract: The strength of adhesion between two layers (1,2) is evaluated by applying a series of laser shocks directly to the surface of one (1) of the layers. Adhesion strength is determined based on the wavelength (?2) and energy (e2) of the laser pulse (L2) creating the shock which causes rupture of the interface (3) between the two layers (1,2).
    Type: Application
    Filed: October 31, 2003
    Publication date: October 1, 2009
    Applicant: NXP B.V.
    Inventor: Jean Philippe Jacquemin
  • SEMICONDUCTOR SUBSTRATE TEMPERATURE DETERMINATION
    Publication number: 20090175313
    Abstract: The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).
    Type: Application
    Filed: April 19, 2007
    Publication date: July 9, 2009
    Applicant: NXP B.V.
    Inventors: Srdjan Kordic, Meindert M. Lunenborg, Jean-Philippe Jacquemin