Abstract: A device for measuring a characteristic of a fluid includes a sensor comprising a first main face furnished with a sensitive part sensitive to said characteristic and intended to be in contact with the fluid, and a second main face opposite furnished with a first electrical contact element on which a measurement signal is obtained. The device also includes a support comprising a first main face provided with a second electrical contact element linked electrically to the first electrical contact element, a second main face opposite, and an opening passing through the main faces of the support.

Abstract: A pressure sensor to measure low pressures, including: a body extending in a plane, the body including a measurement zone situated at an end of the body, a connection zone situated at another end of the body, the measurement zone including a cavity delimited by a wall, that is deformable under effect of a difference in pressure between inside of the cavity and an external environment, the deformable wall situated at rest in a plane parallel to the plane of the sensor; a mechanism measuring deformation of the deformable wall, the measurement mechanism situated in the cavity; an electrical connection connecting the measurement mechanism to the connection zone, the electrical connection arranged in the body.

Abstract: A device for measuring a characteristic of a fluid includes a sensor comprising a first main face furnished with a sensitive part sensitive to said characteristic and intended to be in contact with the fluid, and a second main face opposite furnished with a first electrical contact element on which a measurement signal is obtained. The device also includes a support comprising a first main face provided with a second electrical contact element linked electrically to the first electrical contact element, a second main face opposite, and an opening passing through the main faces of the support.

Abstract: A pressure sensor to measure low pressures, including: a body extending in a plane, the body including a measurement zone situated at an end of the body, a connection zone situated at another end of the body, the measurement zone including a cavity delimited by a wall, that is deformable under effect of a difference in pressure between inside of the cavity and an external environment, the deformable wall situated at rest in a plane parallel to the plane of the sensor; a mechanism measuring deformation of the deformable wall, the measurement mechanism situated in the cavity; an electrical connection connecting the measurement mechanism to the connection zone, the electrical connection arranged in the body.

Abstract: A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.

Abstract: A microdevice encapsulation structure arranged in at least one cavity formed between a substrate and a cap rigidly attached to the substrate is provided, the cap including one layer of a first material, one face of which forms an inner wall of the cavity, and mechanical reinforcement portions rigidly attached at least to and partly covering said face, having gas absorption and/or adsorption properties, in which the Young's modulus of a second material of the mechanical reinforcement portions is higher than that of the first material, wherein each of said portions includes at least one first layer of the second material, and at least one second layer of a third metallic getter material such that the first layer of the second material is arranged between the layer of the first material and the second layer of the third material and/or is covered by the second layer of the third material.

Abstract: A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.

Abstract: A structure (100) for encapsulating at least one microdevice (104) produced on and/or in a substrate (102) and positioned in at least one cavity (110) formed between the substrate and a cap (106) rigidly attached to the substrate, in which the cap includes at least: one layer (112) of a first material, one face of which (114) forms an inner wall of the cavity, and mechanical reinforcement portions (116) rigidly attached at least to the said face of the layer of the first material, partly covering the said face of the layer of the first material, and having gas absorption and/or adsorption properties, and in which the Young's modulus of a second material of the mechanical reinforcement portions is higher than that of the first material.

Abstract: A process is provided for producing at least one interconnecting well to achieve a conductive pathway between at least two connection layers of a component comprising a stack of at least one first substrate and one second substrate which are electrically insulated from one another, the process including defining a surface contact region of a surface connection layer over a surface of the stack and of at least one first contact region embedded in the stack starting from a first embedded connection layer of the first substrate. A region devoid of material is positioned between the first substrate and second substrates and which comprises a stage of producing a interconnecting well which passes through the second substrate and extends between the surface contact region and the first embedded contact region and passes through the region devoid of material, and also a first layer which covers the first embedded connection layer.

Abstract: A method for producing a device including plural cavities defined between a substrate in at least one given semiconductor material and a membrane resting on a top of insulating posts projecting from the substrate, the method allowing a height of the cavity or cavities to be adapted independently of a height of the insulating posts and allowing cavities of different heights to be formed.

Abstract: A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.

Abstract: A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.

Abstract: A device is described of the micro-system and/or nano-system type including: a first substrate, including at least one electrode, called the lower electrode, and at least one dielectric layer, an intermediate substrate, extending across a plane, called the main plane of the device, including a moving portion, an upper substrate, attached to the intermediate substrate, where the said moving portion can be made to move between the lower electrode and the upper substrate.

Abstract: A process is provided for producing at least one interconnecting well to achieve a conductive pathway between at least two connection layers of a component comprising a stack of at least one first substrate and one second substrate which are electrically insulated from one another, the process including defining a surface contact region of a surface connection layer over a surface of the stack and of at least one first contact region embedded in the stack starting from a first embedded connection layer of the first substrate. A region devoid of material is positioned between the first substrate and second substrates and which comprises a stage of producing a interconnecting well which passes through the second substrate and extends between the surface contact region and the first embedded contact region and passes through the region devoid of material, and also a first layer which covers the first embedded connection layer.

Abstract: The field of the invention is that of microsystems of the electrostatically actuated microswitch type that are used in electronics to carry out switching functions, especially in the microwave field for mobile telephony and radars. The object of the invention is to improve the performance of the switch by reducing the response time of the device and by increasing the radiofrequency or microwave power supported, while still maintaining low switching voltages. This improved performance is obtained by using thick membranes and by placing a material of high relative permittivity between said membrane and the associated electrode. The switch is obtained by a novel production process, the membrane being produced on an independent substrate and then joined to the base substrate of the switch. Examples of processes for producing devices according to the invention with the materials that can be used, the possible geometries and the various production steps are given.

Abstract: The field of the invention is that of microsystems of the electrostatically actuated microswitch type that are used in electronics to carry out switching functions, especially in the microwave field for mobile telephony and radars. The object of the invention is to improve the performance of the switch by reducing the response time of the device and by increasing the radiofrequency or microwave power supported, while still maintaining low switching voltages. This improved performance is obtained by using thick membranes and by placing a material of high relative permittivity between said membrane and the associated electrode. The switch is obtained by a novel production process, the membrane being produced on an independent substrate and then joined to the base substrate of the switch. Examples of processes for producing devices according to the invention with the materials that can be used, the possible geometries and the various production steps are given.