Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Abstract: A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

Abstract: A focus metrology target includes one or more periodic arrays of features. A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features includes a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features. A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features.

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

Abstract: A method of measuring a parameter of interest relating to a structure formed by a process on a substrate, and associated apparatuses. The method includes measuring the structure with measurement radiation including a first illumination acquisition setting (determining one or more selected from: a wavelength, a polarization or an incident angle of the measurement radiation) to obtain a first measurement value for the structure. The method further includes estimating, by applying a correction model to the first measurement value, at least a second measurement value for the structure corresponding to measurement of the structure with a second illumination acquisition setting different from the first illumination acquisition setting.

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.