Patents by Inventor Jean-Pierre Dauchot

Jean-Pierre Dauchot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7927466
    Abstract: The present invention relates to the deposition in a magnetron reactor (1) equipped with a magnetron cathode (MC) of at least one material on a substrate (11a), according to which process said material is vaporized by magnetron sputtering, using a gas that is ionized in pulsed mode. To this effect and in order to favour the formation of high current pulses of short duration while avoiding the formation of electric arcs and while enabling an effective ionisation of the sputtered vapour, a preionization of the said gas prior to the application of the main voltage pulse on the magnetron cathode (MC) is carried out in order to generate current pulses (CP) whose decay time (Td), after cut-off of the main voltage pulse (VP) is shorter than 5 ?s.
    Type: Grant
    Filed: September 22, 2006
    Date of Patent: April 19, 2011
    Assignees: Material Nova ASBL, Centre National De La Recherche Scientifique (CNRS), Universite Paris-Sud
    Inventors: Mihai Ganciu-Petcu, Michel Hecq, Jean-Pierre Dauchot, Stephanos Konstantinidis, Jean Bretagne, Ludovic De Poucques, Michel Touzeau
  • Publication number: 20100209728
    Abstract: The present invention provides a magnetron co-sputtering device (6) comprising a main magnetron cathode (x) and a secondary cathode (Y) adapted to be associated with each other to sputter deposit a material on a substrate (2) arranged at a substrate position, the material comprising a first material derived from the main cathode (X) and a second material derived from the secondary cathode (Y), wherein the secondary cathode (Y) is arranged between the main cathode (X) and the substrate position, at a position selected from: (i) a position within a magnetic field derived from a main cathode (X) magnetic source, and (ii) a position within the footprint (6) of the main cathode (X).
    Type: Application
    Filed: July 11, 2008
    Publication date: August 19, 2010
    Applicant: Materia Nova
    Inventors: Jean-Pierre Dauchot, Corinne Nouvellon
  • Publication number: 20070034498
    Abstract: The present invention relates to the deposition in a magnetron reactor (1) equipped with a magnetron cathode (MC) of at least one material on a substrate (11a), according to which process said material is vaporized by magnetron sputtering, using a gas that is ionized in pulsed mode. To this effect and in order to favour the formation of high current pulses of short duration while avoiding the formation of electric arcs and while enabling an effective ionisation of the sputtered vapour, a preionization of the said gas prior to the application of the main voltage pulse on the magnetron cathode (MC) is carried out in order to generate current pulses (CP) whose decay time (Td), after cut-off of the main voltage pulse (VP) is shorter than 5 ?s.
    Type: Application
    Filed: September 22, 2006
    Publication date: February 15, 2007
    Applicants: Materia Nova Asbl, Centre National De La Recherche Scientifique (CNRS, Universite Paris-Sud
    Inventors: Mihai Ganciu-Petcu, Michel Hecq, Jean-Pierre Dauchot, Stephanos Konstantinidis, Jean Bretagne, Ludovic De Poucques, Michel Touzeau