Abstract: Method of manufacturing orientated substrate plates from solid semiconductor blocks of the III-V group.The invention relates to a method of manufacturing to obtain substrate plates prepared to receive integrated semi-conductor circuits of materials of the III-V group obtained by pulling according to Czochralski. These materials having anisotropic properties, upon which the performances of the semiconductor devices depend, it is of major importance to differentiate the crystallographic axes of teach plate with an accuracy higher than half the degree. According to the invention, this differentiation is effected in two steps. The first step consists in the differentiation of the axes from the formation of pulling nucleus. For this purpose, the pulling nucleus is a rectangular parallelepipedon, one edge of which has a facet serving as a recess for fixing the seed crystal the pulling operation.