Abstract: A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of: deposition of at least one single-crystal layer by three-dimensional epitaxial growth on a starting substrate, the layer including areas resulting from the growth of basal facets, and areas resulting from the growth of facets of different orientations, called non-basal facets; supply of an n-dopant gas including a first chemical element selected from the chemical elements of group 16 of the periodic table, and at least one second chemical element selected from the chemical elements of group 14 of the periodic table, such that the concentration of the second element in the areas resulting from the growth of the basal facets is higher than 1.0×1017/cm3, and the concentration of the first element in the areas resulting from the growth of the non-basal facets is lower than 2.0×1018/cm3.

Abstract: The invention relates to a method for fabricating a group 13 nitride semiconductor substrate (5) comprising the following steps of: a) deposition of at least one monocrystalline layer (5b) by epitaxial growth (10) on a starting substrate, said monocrystalline laser having an upper face having structural defects that do not pass all the way through (6); b) deposition, by epitaxial growth (30, 35), of at least one continuous polycrystalline layer (5c); c) separation (40) of the starting substrate (1); d) rectification (50) by removing at least one layer thickness corresponding to the thickness of the one or more deposited polycrystalline lasers (5c), the one or more polycrystalline layers (5c) thus being removed with the exception of the zones of the subjacent monocrystalline layer (5b) corresponding to the structural defects that do not pass all the way through (6) that said one or more polycrystalline layers (5c) fill.

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: A method for manufacturing a semi-conducting material including a layer of nitride of a group 13 element comprising active areas for manufacturing electronic components, and inactive areas, the active and inactive areas extending on a front face of the layer of nitride, the method comprising steps consisting of: using a mask comprising a plurality of apertures each defining an active area pattern on the initial substrate, growing the layer of nitride, receiving a theoretical pattern pitch corresponding to a desired distance between two adjacent active area patterns on the front face of the layer of nitride, calculating at least one mask pitch different from the theoretical pattern pitch for compensating shifts in the active area patterns, the mask pitch corresponding to a distance between two adjacent apertures of the protective mask.

Abstract: A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process.

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: The invention relates to a method for manufacturing a semi-conducting material including a layer (50) of nitride of a group 13 element comprising active areas (52) for manufacturing electronic components, and inactive areas (51), the active and inactive areas extending on a front face (53) of the layer of nitride of a group 13 element, the concentration of crystal defects in the active areas being less than the concentration of defects in the inactive areas, the method comprising steps consisting of: using a mask for forming on an initial substrate (10): first regions for growing active areas and second regions (11) for growing inactive areas, the mask comprising a plurality of apertures each defining an active area pattern on the initial substrate, and growing (700) the layer of nitride of group 13 element comprising the active and inactive areas on the first and second regions, remarkable in that the method further comprises the following steps: receiving a theoretical pattern pitch, the theoretical

Abstract: The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising: the formation of an intermediate layer based on silicon on a starting substrate, said intermediate layer comprising at least two adjacent zones of different crystalline orientations, especially a monocrystalline zone and an amorphous or poly-crystalline zone, growth via epitaxy of a layer of element III nitride on said intermediate layer, the intermediate layer being intended to be vaporised spontaneously during the step consisting of growing the layer of element III nitride via epitaxy.

Abstract: A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect.

Abstract: A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation.

Abstract: A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling.

Abstract: A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 ?m and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.

Abstract: A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.

Abstract: The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of formation of a sacrificial bed (101) on the support (100), formation of pillars (102) on said sacrificial bed, said pillars being made of a material compatible with GaN epitaxial growth, growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support in holes (107) formed between the pillars, and removing the nitride crystal layer from the support.

Abstract: A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.

Abstract: A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.

Abstract: A substrate including a body comprising a Group III-V material and having an upper surface, the body comprising an offcut angle defined between the upper surface and a crystallographic reference plane, and the body further having an offcut angle variation of not greater than about 0.6 degrees.

Abstract: A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 ?m and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.

Abstract: A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation.