Abstract: A method for making a set of surface-emitting laser diodes comprises the making of reflectors by the epitaxial growth of at least one semiconductor material through a mask having apertures with inclined flanks. This method leads to the obtaining of the Bragg reflectors obtained in situ, removing the need for the ion etching of a semiconductor substrate followed by a phase for the conditioning of the surface of the sample before the preparation of the desired laser structure.Application: optical power source.

Abstract: A power transistor comprises, on a layer of insulator, a layer of a semiconductor material comprising several zones with N+, N and N+ doping. The N doped zone corresponds to the gate zone. The N+ doped zones correspond to the drain and source zones. A method for the making of such a transistor is also disclosed. Application: the making of a field-effect transistor with improved heat dissipation.

Abstract: Disclosed is a method for the making of an optoelectronic device such as buried lasers in which the different layers of the device are chiefly made during a single step of epitaxy by means of a removable mechanical mask.

Abstract: The present invention concerns a transistor of semiconductor materials of the 3-5 group on silicon of the type comprising a silicon substrate, at least one layer of semi-insulating 3-5 material and several doped layers of 3-5 group semiconductor material in which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions alternately known as source and drain, each source and drain regions with a metallization, one of the two access regions to a channel being electrically and thermally connected to the silicon substrate. In accordance with the invention, the transistor comprises between the silicon substrate and the semi-insulating layer of 3-5 group semiconductor material, at least one buffer layer of intrinsic silicon.

Abstract: A device made with thin layers comprises at least two layers of materials having different electrical characteristics. At least one of the layers is superconductive. The superconductive layer comprises a rare earth (or yttrium) which is chosen so as to confer superconductive characteristics. The other layer has a constitution which differs from that of the superconductive layer, solely by the fact that the rare earth is different and confers different electrical properties.

Abstract: A laser diode having an active layer which has a composition:Ga.sub.x In.sub.1-x Pwith: 0.51.ltoreq.x.ltoreq.0.53 corresponding to a point of the straight line of the quaternary diagram GaInAsP which satisfies the condition of compatability of the crystal lattice parameter with that of a GaAs substrate. The confinement layers of the laser diode have a composition corresponding to a point of the straight line of the adjacent quaternary diagram GaAlInP which satisfies the condition of compatability of the crystal lattice parameter with that of the GaAs substrate, namely in respect of that point of said straight line which is located at the most favorable end of the line:In.sub.z Al.sub.1-z Pwith: 0.45.ltoreq.z.ltoreq.0.49.