Patents by Inventor Jean-Pierre Locquet
Jean-Pierre Locquet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10290519Abstract: A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.Type: GrantFiled: July 31, 2015Date of Patent: May 14, 2019Assignee: KATHOLIEKE UNIVERSITEIT LEUVENInventors: Jean-Pierre Locquet, Chen-Yi Su
-
Publication number: 20170271185Abstract: A deposition device for providing a thin film on a substrate. The device comprises a material source for providing at least one first metallic element which does not re-evaporate substantially from the substrate under particular growth conditions, at least one second metallic element or metal based molecule which does re-evaporate substantially from the substrate under the same growth conditions, and a component suitable for forming an at least one first compound with the at least one first metallic element and an at least one second compound with the at least one second metallic element or metal based molecule. The device comprises a controller configured to control the growth conditions, and the amounts of the at least one first metallic element, the at least one second metallic element or metal based molecule, and the component so as to obtain a substantially stoichiometric thin film.Type: ApplicationFiled: July 31, 2015Publication date: September 21, 2017Applicant: Katholieke Universiteit LeuvenInventors: Jean-Pierre LOCQUET, Chen-Yi SU
-
Publication number: 20170263475Abstract: A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.Type: ApplicationFiled: July 31, 2015Publication date: September 14, 2017Applicant: KATHOLIEKE UNIVERSITEIT LEUVENInventors: Jean-Pierre LOCQUET, Chen-Yi SU
-
Patent number: 8894769Abstract: The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centered on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.Type: GrantFiled: June 18, 2003Date of Patent: November 25, 2014Assignee: RiberInventors: Catherine Chaix, Alain Jarry, Pierre-André Nutte, Jean-Pierre Locquet, Jean Fompeyrine, Heinz Siegwart
-
Publication number: 20060216161Abstract: The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centred on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.Type: ApplicationFiled: June 18, 2003Publication date: September 28, 2006Inventors: Catherine Chaix, Alain Jarry, Pierre-Andre Nutte, Jean-Pierre Locquet, Jean Fompeyrine, Heinz Siegwart
-
Patent number: 6717199Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.Type: GrantFiled: April 4, 2003Date of Patent: April 6, 2004Assignee: International Business Machines CorporationInventors: Robert Benjamin Laibowitz, John David Baniecki, Johannes Georg Bednorz, Jean-Pierre A. Locquet
-
Publication number: 20030209745Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.Type: ApplicationFiled: April 4, 2003Publication date: November 13, 2003Applicant: International Business Machines CorporationInventors: Robert Benjamin Laibowitz, John David Baniecki, Johannes Georg Bednorz, Jean-Pierre A. Locquet
-
Patent number: 6631057Abstract: The present invention concerns at least an antiferromagnetic layer, which is in direct contact with a ferromagnetic layer for inducing an exchange bias in the ferromagnetic layer. Thus, the ferromagnetic layer is pinned by the antiferromagnetic layer, also referred to as the pinning layer. The antiferromagnetic or pinning layer comprises a compound from the group of orthoferrites, which show a variety of advantages. For example, these antiferromagnets can have a Néel temperature TN ranging from at least 623 K to 740 K depending on the compounds, and they can display a weak ferromagnetic moment. Therefore, a magnetic device comprising the mentioned structure can be used properly in an environment of a high operating temperature. The compound can be described by the formula RFe1−xTMxO3with R a rare earth element or Yttrium, and TM a transition metal which can be one element of the groups IB to VIII.Type: GrantFiled: March 8, 2000Date of Patent: October 7, 2003Assignee: International Business Machines CorporationInventors: Rolf Allenspach, Jean Fompeyrine, Eric Fullerton, Jean Pierre Locquet, Timothy Moran, Maria Seo
-
Patent number: 6593181Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.Type: GrantFiled: April 20, 2001Date of Patent: July 15, 2003Assignee: International Business Machines CorporationInventors: Robert Benjamin Laibowitz, John David Baniecki, Johannes Georg Bednorz, Jean-Pierre A. Locquet
-
Publication number: 20020153549Abstract: A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalLine material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.Type: ApplicationFiled: April 20, 2001Publication date: October 24, 2002Inventors: Robert Benjamin Laibowitz, John David Baniecki, Johannes Georg Bednorz, Jean-Pierre A. Locquet
-
Patent number: 6448766Abstract: Magnetic characterization of the magnetic field emanating from an RWH device is presented using a magnetostrictive layer as a probe between the device and the scanned SFM tip. The findings suggest a very promising technique to resolve magnetic fields laterally at least in the 100 nm realm. Other magnetosensitive properties such as the magnetoelastic and the piezomagnetic effect can be used in a similar way to infer magnetic characteristics of microstructures or of magnetic multilayers.Type: GrantFiled: March 20, 2000Date of Patent: September 10, 2002Assignee: International Business Machines CorporationInventors: Ruediger Berger, Andreas H. Dietzel, Jean Fompeyrine, Frank Krause, Jean-Pierre Locquet, Erich Maechler
-
Patent number: 5648321Abstract: Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.Type: GrantFiled: September 13, 1993Date of Patent: July 15, 1997Assignee: International Business Machines CorporationInventors: Johannes Georg Bednorz, Andrei Catana, Jean Pierre Locquet, Erich Maechler, Carl Alexander Mueller