Patents by Inventor Jean-Pierre Nieto

Jean-Pierre Nieto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the direct bonding of a silicon oxide layer
    Patent number: 9064783
    Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: June 23, 2015
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Chiara Sabbione, Lea Di Cioccio, Jean-Pierre Nieto, Laurent Vandroux
  • METHOD FOR THE DIRECT BONDING OF A SILICON OXIDE LAYER
    Publication number: 20140342528
    Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).
    Type: Application
    Filed: October 24, 2012
    Publication date: November 20, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Chiara Sabbione, Léa Di Cioccio, Jean-Pierre Nieto, Laurent Vandroux