Patents by Inventor Jean-Pierre Nozières
Jean-Pierre Nozières has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11380839Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.Type: GrantFiled: May 2, 2020Date of Patent: July 5, 2022Assignees: Antaios, Centre National De La Recherche ScientifiqueInventors: Witold Kula, Marc Drouard, Gilles Gaudin, Jean-Pierre Nozieres
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Publication number: 20200357982Abstract: A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5° and 90°, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.Type: ApplicationFiled: May 2, 2020Publication date: November 12, 2020Inventors: Witold KULA, Marc Drouard, Gilles Gaudin, Jean-Pierre Nozieres
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Patent number: 10224085Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.Type: GrantFiled: January 13, 2016Date of Patent: March 5, 2019Assignees: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
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Publication number: 20180005677Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.Type: ApplicationFiled: January 13, 2016Publication date: January 4, 2018Applicants: Centre National de la Recherche Scientifique, Commissariat à I'Énergie Atomique et aux Énergies AlternativesInventors: Gilles Gaudin, Ioan Mihai Miron, Olivier Boulle, Safeer Chenattukuz Hiyil, Jean-Pierre Nozieres
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Patent number: 9679626Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.Type: GrantFiled: June 3, 2014Date of Patent: June 13, 2017Assignee: CROCUS TECHNOLOGY SAInventors: Neal Berger, Jean-Pierre Nozières
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Publication number: 20170131910Abstract: A register including: a plurality of volatile memory cells each having a first input and an output, the volatile memory cells being coupled in series with each other via their first inputs and outputs; a non-volatile memory comprising a plurality of non-volatile memory cells; and one or more serial connections adapted to perform at least one of: serially supply data to be written to the non-volatile memory from a last or another of the volatile memory cells to the non-volatile memory during a back-up operation of data stored by the volatile memory cells; and serially supply data read from the non-volatile memory to a first of the volatile memory cells during a restoration operation of the data stored by the volatile memory cells.Type: ApplicationFiled: June 8, 2015Publication date: May 11, 2017Applicants: Commissariat à I'Énergie Atomique et aux Énergies Alternatives, Centre National de la Recherche ScientifiqueInventors: Pierre Paoli, Christophe Layer, Virgile Javerliac, Jean-Pierre Nozieres
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Patent number: 9059400Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.Type: GrantFiled: March 10, 2014Date of Patent: June 16, 2015Assignee: Crocus Technology Inc.Inventors: Dafna Beery, Jason Reid, Jong Shin, Jean Pierre Nozieres, Olivier Joubert
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Patent number: 8902643Abstract: A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.Type: GrantFiled: October 9, 2012Date of Patent: December 2, 2014Assignee: Crocus Technology Inc.Inventors: Neal Berger, Jean-Pierre Nozieres, Virgile Javerliac
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Publication number: 20140269042Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.Type: ApplicationFiled: June 3, 2014Publication date: September 18, 2014Inventors: Neal Berger, Jean-Pierre Nozières
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Publication number: 20140252516Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.Type: ApplicationFiled: March 10, 2014Publication date: September 11, 2014Applicant: CROCUS TECHNOLOGY INC.Inventors: Dafna Beery, Jason Reid, Jong Shin, Jean Pierre Nozieres, Olivier Joubert
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Patent number: 8824202Abstract: The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.Type: GrantFiled: July 8, 2010Date of Patent: September 2, 2014Assignee: Crocus Technology S.A.Inventors: Neal Berger, Jean-Pierre Nozières
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Patent number: 8652856Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.Type: GrantFiled: March 21, 2013Date of Patent: February 18, 2014Assignee: Crocus Technology Inc.Inventors: Jean Pierre Nozieres, Jason Reid
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Patent number: 8409880Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.Type: GrantFiled: May 10, 2012Date of Patent: April 2, 2013Assignee: Crocus TechnologiesInventors: Jean Pierre Nozieres, Jason Reid
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Patent number: 8273582Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.Type: GrantFiled: July 9, 2009Date of Patent: September 25, 2012Assignee: Crocus TechnologiesInventors: Jean Pierre Nozieres, Jason Reid
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Publication number: 20120225499Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.Type: ApplicationFiled: May 10, 2012Publication date: September 6, 2012Applicant: CROCUS TECHNOLOGIESInventors: Jean Pierre Nozieres, Jason Reid
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Patent number: 8228716Abstract: Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier, provided between the reference layer and the storage layer; wherein the magnetic reference layer, and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element. The magnetic element disclosed herein has a voltage gain of typically 10 to 50% compared to conventional magnetic elements and shows a reduction of the stress induced during a writing operation as well as a reduction of the aging.Type: GrantFiled: August 31, 2010Date of Patent: July 24, 2012Assignee: Crocus Technology SAInventors: Jean-Pierre Nozières, Ioan Lucian Prejbeanu
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Patent number: 8102703Abstract: A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption.Type: GrantFiled: July 14, 2009Date of Patent: January 24, 2012Assignee: Crocus TechnologyInventors: Jean-Pierre Nozières, Bernard Dieny
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Patent number: 8102701Abstract: A magnetic memory device of MRAM type with a thermally-assisted writing procedure, the magnetic memory device being formed from a plurality of memory cells, each memory cell comprising a magnetic tunnel junction, the magnetic tunnel junction comprising a magnetic storage layer in which data can be written in a writing process; a reference layer, having a magnetization being always substantially in the same direction at any time of the writing process; an insulating layer between the reference layer and the storage layer; wherein the magnetic tunnel junction further comprises a writing layer made of a ferrimagnetic 3d-4f amorphous alloy, and comprising a net magnetization containing a first magnetization contribution originating from the sub-lattice of 3d transition elements and a second magnetization contribution originating from the sub-lattice of 4f rare-earth elements. The magnetic memory device has a low power consumption.Type: GrantFiled: June 11, 2010Date of Patent: January 24, 2012Assignee: Crocus Technology SAInventors: Ioan Lucian Prejbeanu, Jean-Pierre Nozieres
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Patent number: 8031519Abstract: A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.Type: GrantFiled: June 16, 2009Date of Patent: October 4, 2011Assignee: Crocus Technology S.A.Inventors: Virgile Javerliac, Neal Berger, Kenneth Mackay, Jean-Pierre Nozieres
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Patent number: 7957181Abstract: This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least: one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called “free” magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.Type: GrantFiled: March 31, 2008Date of Patent: June 7, 2011Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Pierre Nozieres, Ricardo Sousa, Bernard Dieny, Olivier Redon, Ioan Lucian Prejbeanu