Patents by Inventor Jean-Pierre Pujo

Jean-Pierre Pujo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field-effect semiconductor device and method of forming the same
    Patent number: 8188539
    Abstract: A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
    Type: Grant
    Filed: August 10, 2005
    Date of Patent: May 29, 2012
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Jean-Michel Reynes, Isabelle Majoral, Jean-Pierre Pujo, Evgueniy Stefanov
  • FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20100155828
    Abstract: A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
    Type: Application
    Filed: August 10, 2005
    Publication date: June 24, 2010
    Applicant: Freescale Semiconductor, Inc.
    Inventors: Jean-Michel Reynes, Isabelle Majoral, Jean-Pierre Pujo, Evgueniy Stefanov