Abstract: A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.

Abstract: A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E1) and a tuning stack (E2). According to the invention, transducer stack (E1) includes two defined electrodes (4, 6) and piezoelectric material (2), and stack (E2) includes a layer of piezoelectric material (8) and two defined electrodes (10, 12). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode (6) of the transducer stack; c) formation of a defined electrode (10) of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (10), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode (12) of the tuning stack, aligned with the defined electrode (10).

Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

Abstract: A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.

Abstract: A touch surface device, comprising at least: an element comprising a first face forming the touch surface and a second face opposite to the first face; an acoustic wave sensor including at least one portion of piezoelectric material disposed between two electrodes, the portion of piezoelectric material and both electrodes being structured by forming surface wavinesses as wrinkles, the sensor being secured to the second face of the element such that apexes or valleys of the wrinkles are in contact with the second face of the element; an electronic circuit coupled to the electrodes of the sensor and configured to identify, from an electric signal intended to be outputted from the electrodes of the sensor, at least one touch gesture made on the touch surface.

Abstract: A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E1) and a tuning stack (E2). According to the invention, transducer stack (E1) includes two defined electrodes (4, 6) and piezoelectric material (2), and stack (E2) includes a layer of piezoelectric material (8) and two defined electrodes (10, 12). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode (6) of the transducer stack; c) formation of a defined electrode (10) of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (10), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode (12) of the tuning stack, aligned with the defined electrode (10).

Abstract: A touch surface device, comprising at least: an element comprising a first face forming the touch surface and a second face opposite to the first face; an acoustic wave sensor including at least one portion of piezoelectric material disposed between two electrodes, the portion of piezoelectric material and both electrodes being structured by forming surface wavinesses as wrinkles, the sensor being secured to the second face of the element such that apexes or valleys of the wrinkles are in contact with the second face of the element; an electronic circuit coupled to the electrodes of the sensor and configured to identify, from an electric signal intended to be outputted from the electrodes of the sensor, at least one touch gesture made on the touch surface.

Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

Abstract: A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.

Abstract: A method forming an elastic undulated layer locally lying on a substrate from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method including: melting a foundation for a duration of at least 50 ns, the foundation thickness being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation, by forming wrinkles, of the elastic layer and the foundation and accompanied by localized adherent contact between the elastic layer and the rigid substrate in zones separating regions of the foundation; solidifying the foundation to bring it back to the solid state; removing the foundation brought back to the solid state to suspend a layer above the substrate outside the zones of localized adherent contact, the suspended layer being undulated in accordance with the wrinkles.

Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

Abstract: A pressure-sensitive sensor including a substrate supporting a piezoelectric layer of a piezoelectric material. The piezoelectric layer includes surface undulations as wrinkles on which pressure is exerted upon use of the sensor. The piezoelectric layer is sandwiched between two electrodes for collecting charges generated by deformation of the piezoelectric layer.

Abstract: A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.

Abstract: A pressure-sensitive sensor including a substrate supporting a piezoelectric layer of a piezoelectric material. The piezoelectric layer includes surface undulations as wrinkles on which pressure is exerted upon use of the sensor. The piezoelectric layer is sandwiched between two electrodes for collecting charges generated by deformation of the piezoelectric layer.

Abstract: A method forming an elastic undulated layer locally lying on a substrate from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method including: melting a foundation for a duration of at least 50 ns, the foundation thickness being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation, by forming wrinkles, of the elastic layer and the foundation and accompanied by localized adherent contact between the elastic layer and the rigid substrate in zones separating regions of the foundation; solidifying the foundation to bring it back to the solid state; removing the foundation brought back to the solid state to suspend a layer above the substrate outside the zones of localized adherent contact, the suspended layer being undulated in accordance with the wrinkles.

Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

Abstract: A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.

Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.