Patents by Inventor Jean-Sebastien Moulet

Jean-Sebastien Moulet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11952808
    Abstract: A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: April 9, 2024
    Assignees: NOVARES FRANCE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frédérick Reichheld, François Bollier, Christophe Cazes, Lamine Benaissa, Jean-Sébastien Moulet
  • Patent number: 11601107
    Abstract: A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E1) and a tuning stack (E2). According to the invention, transducer stack (E1) includes two defined electrodes (4, 6) and piezoelectric material (2), and stack (E2) includes a layer of piezoelectric material (8) and two defined electrodes (10, 12). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode (6) of the transducer stack; c) formation of a defined electrode (10) of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (10), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode (12) of the tuning stack, aligned with the defined electrode (10).
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: March 7, 2023
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ETAUX ENERGIES ALTERNATIVES
    Inventors: Marie Gorisse, Alexandre Reinhardt, Lamine Benaissa, Jean-Sébastien Moulet
  • Patent number: 11595021
    Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: February 28, 2023
    Assignees: COMMISSARIAT A L'ENERGIE AT TOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Thu Trang Vo, Jean-Sebastien Moulet, Alexandre Reinhardt, Isabelle Huyet, Alexis Drouin, Yann Sinquin
  • Publication number: 20220349221
    Abstract: A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.
    Type: Application
    Filed: June 22, 2020
    Publication date: November 3, 2022
    Inventors: Frédérick REICHHELD, François BOLLIER, Christophe CAZES, Lamine BENAISSA, Jean-Sébastien MOULET
  • Patent number: 11442571
    Abstract: A touch surface device, comprising at least: an element comprising a first face forming the touch surface and a second face opposite to the first face; an acoustic wave sensor including at least one portion of piezoelectric material disposed between two electrodes, the portion of piezoelectric material and both electrodes being structured by forming surface wavinesses as wrinkles, the sensor being secured to the second face of the element such that apexes or valleys of the wrinkles are in contact with the second face of the element; an electronic circuit coupled to the electrodes of the sensor and configured to identify, from an electric signal intended to be outputted from the electrodes of the sensor, at least one touch gesture made on the touch surface.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: September 13, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lamine Benaissa, Jean-Sebastien Moulet
  • Publication number: 20210091742
    Abstract: A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E1) and a tuning stack (E2). According to the invention, transducer stack (E1) includes two defined electrodes (4, 6) and piezoelectric material (2), and stack (E2) includes a layer of piezoelectric material (8) and two defined electrodes (10, 12). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode (6) of the transducer stack; c) formation of a defined electrode (10) of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (10), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode (12) of the tuning stack, aligned with the defined electrode (10).
    Type: Application
    Filed: December 21, 2018
    Publication date: March 25, 2021
    Inventors: Marie Gorisse, Alexandre Reinhardt, Lamine Benaissa, Jean-Sébastien Moulet
  • Publication number: 20200401262
    Abstract: A touch surface device, comprising at least: an element comprising a first face forming the touch surface and a second face opposite to the first face; an acoustic wave sensor including at least one portion of piezoelectric material disposed between two electrodes, the portion of piezoelectric material and both electrodes being structured by forming surface wavinesses as wrinkles, the sensor being secured to the second face of the element such that apexes or valleys of the wrinkles are in contact with the second face of the element; an electronic circuit coupled to the electrodes of the sensor and configured to identify, from an electric signal intended to be outputted from the electrodes of the sensor, at least one touch gesture made on the touch surface.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 24, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lamine BENAISSA, Jean-Sebastien MOULET
  • Publication number: 20200389148
    Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.
    Type: Application
    Filed: March 9, 2018
    Publication date: December 10, 2020
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Thu Trang VO, Jean-Sebastien MOULET, Alexandre REINHARDT, Isabelle HUYET, Alexis DROUIN, Yann SINQUIN
  • Patent number: 10357917
    Abstract: A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: July 23, 2019
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Lamine Benaissa, Jean-Sebastien Moulet
  • Patent number: 10183441
    Abstract: A method forming an elastic undulated layer locally lying on a substrate from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method including: melting a foundation for a duration of at least 50 ns, the foundation thickness being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation, by forming wrinkles, of the elastic layer and the foundation and accompanied by localized adherent contact between the elastic layer and the rigid substrate in zones separating regions of the foundation; solidifying the foundation to bring it back to the solid state; removing the foundation brought back to the solid state to suspend a layer above the substrate outside the zones of localized adherent contact, the suspended layer being undulated in accordance with the wrinkles.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: January 22, 2019
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Lamine Benaissa, Jean-Sebastien Moulet
  • Patent number: 9991439
    Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: June 5, 2018
    Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, SOITEC
    Inventors: Chrystel Deguet, Nicolas Blanc, Bruno Imbert, Jean-Sebastien Moulet
  • Patent number: 9981420
    Abstract: A pressure-sensitive sensor including a substrate supporting a piezoelectric layer of a piezoelectric material. The piezoelectric layer includes surface undulations as wrinkles on which pressure is exerted upon use of the sensor. The piezoelectric layer is sandwiched between two electrodes for collecting charges generated by deformation of the piezoelectric layer.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: May 29, 2018
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Lamine Benaissa, Jean-Sebastien Moulet
  • Publication number: 20160257597
    Abstract: A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.
    Type: Application
    Filed: October 16, 2014
    Publication date: September 8, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lamine BENAISSA, Jean-Sebastien MOULET
  • Publication number: 20160251250
    Abstract: A method forming an elastic undulated layer locally lying on a substrate from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method including: melting a foundation for a duration of at least 50 ns, the foundation thickness being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation, by forming wrinkles, of the elastic layer and the foundation and accompanied by localized adherent contact between the elastic layer and the rigid substrate in zones separating regions of the foundation; solidifying the foundation to bring it back to the solid state; removing the foundation brought back to the solid state to suspend a layer above the substrate outside the zones of localized adherent contact, the suspended layer being undulated in accordance with the wrinkles.
    Type: Application
    Filed: October 16, 2014
    Publication date: September 1, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lamine BENAISSA, Jean-Sebastien MOULET
  • Publication number: 20160252411
    Abstract: A pressure-sensitive sensor including a substrate supporting a piezoelectric layer of a piezoelectric material. The piezoelectric layer includes surface undulations as wrinkles on which pressure is exerted upon use of the sensor. The piezoelectric layer is sandwiched between two electrodes for collecting charges generated by deformation of the piezoelectric layer.
    Type: Application
    Filed: October 16, 2014
    Publication date: September 1, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Lamine BENAISSA, Jean-Sebastien MOULET
  • Patent number: 8951809
    Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: February 10, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Sebastien Moulet, Lea Di Cioccio, Marion Migette
  • Patent number: 8693835
    Abstract: A method for transferring a thin layer from a lithium-based first substrate includes proton exchange between the first substrate and a first electrolyte, which is an acid, through a free face of the first substrate so as to replace lithium ions of the first substrate by protons, in a proportion between 10% and 80%, over a first depth e1. A reverse proton exchange between the first substrate and a second electrolyte, through the free face is carried out so as to replace substantially all the protons with lithium ions over a second depth e2 smaller than the first depth e1, and so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step remain. The depth e2 defines a thin layer between the free face and the intermediate layer. A heat treatment is carried out under conditions suitable for embrittling the intermediate layer and the thin film is separated from the first substrate at the intermediate layer.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: April 8, 2014
    Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, S.O.I. Tec Silicon on Insulator Technologies
    Inventors: Aurélie Tauzin, Jean-Sébastien Moulet
  • Patent number: 8445122
    Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: May 21, 2013
    Assignees: Commissariat a l 'Energie Atomique, S.O.I. Tec Silicon on Insulator Technologies
    Inventors: Chrystel Deguet, Laurent Clavelier, Franck Fournel, Jean-Sebastien Moulet
  • Publication number: 20130111719
    Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.
    Type: Application
    Filed: July 5, 2011
    Publication date: May 9, 2013
    Applicants: SOITEC, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Chrystel Deguet, Nicolas Blanc, Bruno Imbert, Jean-Sebastien Moulet
  • Publication number: 20110104829
    Abstract: A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.
    Type: Application
    Filed: April 3, 2009
    Publication date: May 5, 2011
    Applicant: Commiss. A L'Energie Atom. ET Aux Energ. Alterna.
    Inventors: Jean-Sebastien Moulet, Lea Di Cioccio, Marion Migette