Patents by Inventor Jean-Yves Emery
Jean-Yves Emery has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6954594Abstract: For regenerating a binary optical signal (sd, sE2) a monolithic semiconductor component (100) comprises: a saturable absorber structure (3) having a saturable absorber section (31), a first optical waveguide (1, 11 to 16) defining a first guide axis (X) disposed on either side of the section (31), a second optical waveguide (2, 21 to 24) defining a second guide axis (Y) crossing the first axis (X) in the section (31) and disposed on either side of the section (31). The saturable absorber structure has a dimension along the first guide axis greater than its dimension along the second guide axis. The first and second waveguides respectively inject an optical clock signal (c1) and the binary optical signal (sd, sE2). Application to optical transmission systems for regenerating signals in accordance with two different regeneration regimes.Type: GrantFiled: May 28, 2003Date of Patent: October 11, 2005Assignee: Avanex CorporationInventors: Alexandre Shen, Nabil Sahri, Jean-Yves Emery
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Patent number: 6894833Abstract: The invention relates to a semiconductor optical amplifier including a buried guide active structure (12), characterized in that the guide active structure (12) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material (50) against a ridge (15) surrounding said guide active structure (12).Type: GrantFiled: August 20, 2001Date of Patent: May 17, 2005Assignee: Avanex CorporationInventors: Léon Goldstein, Jean-Yves Emery, Frédéric Pommereau
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Patent number: 6751015Abstract: The invention concerns a semiconductor optical amplifier including at least two amplifier sections (30, 40) respectively favoring a higher gain of the TE mode and the TM mode of polarization of the light to be amplified, said sections each having an active guide structure (12) of the same thickness (e), the amplifier being characterized in that the active guide structure (12) of the two sections (30, 40) is subjected to respective different tension stresses and/or has a different geometry so as to render the overall gain of the amplifier insensitive to the polarization of said light to be amplified, and in that there is no discontinuity of the effective refractive index at the transition between the sections (30, 40).Type: GrantFiled: April 11, 2002Date of Patent: June 15, 2004Assignee: Avanex CorporationInventors: Léon Goldstein, Jean-Yves Emery
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Publication number: 20030228155Abstract: For regenerating a binary optical signal (sd, sE2) a monolithic semiconductor component (100) comprises:Type: ApplicationFiled: May 28, 2003Publication date: December 11, 2003Applicant: ALCATELInventors: Alexandre Shen, Nabil Sahrl, Jean-Yves Emery
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Patent number: 6473225Abstract: In order to be able to use a semiconductor light amplifier of conventional type and operating under gain saturation conditions while nevertheless providing constant gain for an optical signal to be amplified, the device comprises means for producing a compensation light wave and coupling means for injecting the optical signal to be amplified and the compensation light wave into the amplifier. The compensation light wave presents amplitude modulation such that when combined with the optical signal to be amplified the overall amplitude modulation is eliminated or at least attenuated. The device is applicable to optical transmission systems operating at a single wavelength or with wavelength division multiplexing.Type: GrantFiled: February 26, 2001Date of Patent: October 29, 2002Assignee: AlcatelInventors: Thierry Zami, Dominique Chiaroni, Nicolas Le Sauze, Alain Pons, Jean-Yves Emery, François Dorgeuille
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Publication number: 20020154391Abstract: The invention concerns a semiconductor optical amplifier including at least two amplifier sections (30, 40) respectively favoring a higher gain of the TE mode and the TM mode of polarization of the light to be amplified, said sections each having an active guide structure (12) of the same thickness (e), the amplifier being characterized in that the active guide structure (12) of the two sections (30, 40) is subjected to respective different tension stresses and/or has a different geometry so as to render the overall gain of the amplifier insensitive to the polarization of said light to be amplified, and in that there is no discontinuity of the effective refractive index at the transition between the sections (30, 40).Type: ApplicationFiled: April 11, 2002Publication date: October 24, 2002Inventors: Leon Goldstein, Jean-Yves Emery
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Publication number: 20020149073Abstract: The invention relates to a semiconductor optical amplifier including a buried guide active structure (12), characterized in that the guide active structure (12) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material (50) against a ridge (15) surrounding said guide active structure (12).Type: ApplicationFiled: April 9, 2002Publication date: October 17, 2002Inventors: Leon Goldstein, Jean-Yves Emery, Frederic Pommereau
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Publication number: 20020057491Abstract: The invention relates to a semi-conductor optical amplifier comprising an active waveguide and a laser oscillator structure framing the active waveguide, characterized in that it includes at least one input for control of the gain at the threshold of the said laser structure to enable adjustment of the value of the amplifier's gain. This amplifier is intended to be used in an optical system which includes means of regulation capable of acting on the control inputs of the amplifier in response to the optical power of the carrier wave of an output signal to enable adjustment of the value of the amplifier's gain. This optical system makes it possible particularly to obtain power equalization of a signal at the entry to a telecommunication system.Type: ApplicationFiled: November 4, 1999Publication date: May 16, 2002Inventors: FRANCOIS DORGEUILLE, BRUNO LAVIGNE, DOMINIQUE CHIARONI, CHRISTOPHE OUGIER, JEAN-YVES EMERY
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Patent number: 6310719Abstract: The invention relates to a semi-conductor optical amplifier insensitive to the polarization of light. The active layer (20) of this amplifier is made up of an alternating series of solid sub-layers alternately under tensile stress (21) and compressive stress (22) and having the same forbidden band-width. The sub-layers under tensile stress (21) favour the propagation of the TM mode of polarization of light and the sub-layers under compression (22) favour the propagation of the TE mode of polarization of light. In addition, the thicknesses of the sub-layers have values which ensure equal gains G(TE) and G(TM) for the active layer.Type: GrantFiled: October 1, 1999Date of Patent: October 30, 2001Assignee: AlcatelInventors: Leon Goldstein, Jean-Yves Emery, Fabienne Gaborit
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Patent number: 6271961Abstract: An active structure in the semiconductor die of an amplifier or converter includes a plurality of stacked active layers with different compositions. The different compositions lead to a spectral offset between the respective gain bands of the layers which widens the gain band of the amplifier or the optical bandwidth of the converter. Applications include fiber optic telecommunication networks.Type: GrantFiled: May 25, 1999Date of Patent: August 7, 2001Assignee: AlcatelInventors: Jean-Yves Emery, Fabienne Gaborit, Christopher Janz, François Dorgeuille, Béatrice Dagens
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Patent number: 6005708Abstract: The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.Type: GrantFiled: April 9, 1998Date of Patent: December 21, 1999Assignee: AlcatelInventors: Denis Leclerc, Leon Goldstein, Jean-Yves Emery, Beatrice Dagens, Christopher Janz, Michael Schilling, Klaus Wunstel
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Patent number: 5982531Abstract: The invention concerns a semiconductor optical amplifier. The optical guide structure of this amplifier comprises a rectangular cross-section active stripe (12). Its material is homogeneous and it is subjected to a tensile strain sufficient to render the amplifier insensitive to the polarisation of the light to be amplified.The invention finds an application in optical telecommunications.Type: GrantFiled: October 29, 1997Date of Patent: November 9, 1999Assignee: Alcatel OptronicsInventors: Jean-Yves Emery, Leon Goldstein, Pierre Doussiere, Jean Barrau
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Patent number: 5707890Abstract: From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.Type: GrantFiled: March 24, 1995Date of Patent: January 13, 1998Assignee: Alcatel N.V.Inventors: Jean-Yves Emery, Leon Goldstein
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Patent number: 5646064Abstract: A portion of the surface of the first structure is protected by an oxide deposit, and the non-protective layers are etched down to a stop layer. The layers in the etched zone are then built up by molecular beam epitaxy, and one of the built-up layers is given a composition that is different from the composition of the corresponding adjacent layer in the first structure. The method is applicable to fabricating an integrated semiconductor comprising both a laser and a modulator.Type: GrantFiled: January 20, 1995Date of Patent: July 8, 1997Assignee: Alcatel N.V.Inventors: Elisabeth Gaumont-Goarin, Christine Labourie, Jean-Yves Emery