Abstract: An organic light emitting diode comprises, between a bottom electrode and a top electrode, an organic light-emitting layer and a light-extraction enhancement layer made of a dielectric material. According to the invention, if nD, is the optical index of said dielectric material, and if ?M is the center of the range of wavelengths of the emitted light, the thickness of the light-extraction enhancement layer is approximately equal to 5.?M/8.nD. Thank to the invention, light extraction is enhanced in a range of wavelengths superior or equal to 150 nm.

Abstract: An organic light-emitting diode comprising a substrate, an organic light-emitting layer arranged between a first electrode and a transparent and semi-reflecting second electrode with a multilayer structure subdivided into: a first silver-based metallic layer in contact with the organic light-emitting layer, a second aluminum-based metallic layer, and a third dielectric layer, wherein the second metallic layer is inserted between the first metallic layer and the third dielectric layer of the transparent second electrode, the organic light-emitting layer comprises a doped sub-layer in contact with the first metallic layer of the transparent second electrode, and the thickness of the third dielectric layer is adjusted to limit the absorption by the first and second metallic layers of the light emitted by the diode.

Abstract: An organic light emitting diode comprises, between a bottom electrode and a top electrode, an organic light-emitting layer and a light-extraction enhancement layer made of a dielectric material. According to the invention, if nD, is the optical index of said dielectric material, and if ?M is the center of the range of wavelengths of the emitted light, the thickness of the light-extraction enhancement layer is approximately equal to 5.?M/8.nD. Thank to the invention, light extraction is enhanced in a range of wavelengths superior or equal to 150 nm.

Abstract: An organic light-emitting diode comprising a substrate (1), an organic light-emitting layer (3) arranged between a first electrode (2) and a transparent and semi-reflecting second electrode with a multilayer structure subdivided into: a first silver-based metallic layer (4) in contact with the organic light-emitting layer (3), a second aluminum-based metallic layer (5), and a third dielectric layer (6), characterized in that the second metallic layer (5) is inserted between the first metallic layer (4) and the third dielectric layer (6) of the transparent second electrode, that the organic light-emitting layer (3) comprises a doped sub-layer in contact with the first metallic layer (4) of the transparent second electrode, and that the thickness of said third dielectric layer (6) is adjusted to limit the absorption by said first (4) and second (5) metallic layers of the light emitted by the diode.