Patents by Inventor Jean-Yves Robic

Jean-Yves Robic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure of a lithography mask
    Patent number: 7745070
    Abstract: The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.
    Type: Grant
    Filed: October 19, 2005
    Date of Patent: June 29, 2010
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Christelle Charpin-Nicolle, Jean-Yves Robic
  • Structure Of A Lithography Mask
    Publication number: 20070292772
    Abstract: The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.
    Type: Application
    Filed: October 19, 2005
    Publication date: December 20, 2007
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Christelle Charpin-Nicolle, Jean-Yves Robic
  • Structure for a reflection lithography mask and method for making same
    Patent number: 6593036
    Abstract: The invention concerns a structure for a lithographic reflection mask comprising a receive medium (12) on which is fixed a reflector (11) including at least one layer, the reflector (11) being fixed to the receive medium (12) in a reverse manner relative to a manufacturing medium (10) on which it has previously been manufactured and which is then
    Type: Grant
    Filed: March 13, 2001
    Date of Patent: July 15, 2003
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Yves Robic, Bernard Aspar
  • Microlaser with modulated emission frequency
    Patent number: 6047012
    Abstract: A microlaser cavity is provided with a solid active medium (2), an entry mirror (4), an exit mirror (60) and a layer of electrically resistive material formed on one of the surfaces of the microcavity. The electrically resistive layer has optical transparency and reflectivity properties adapted to the surface of the microcavity on which the layer is deposited.
    Type: Grant
    Filed: December 8, 1997
    Date of Patent: April 4, 2000
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Philippe Nerin, Jean-Yves Robic, Jean Marty
  • Multilayer stack of fluoride materials usable in optics and its production process
    Patent number: 5879820
    Abstract: The invention relates to a multilayer stack of fluoride materials usable in optics and its production process.This stack is constituted by alternating layers of a first, high index, fluoride material such as YF.sub.3 and a second, low index fluoride material such as LiF, able to form together a specific, stable compound such as YLiF.sub.4, so that the interface between two adjacent layers of the stack is at least partly formed from said compound.
    Type: Grant
    Filed: June 20, 1997
    Date of Patent: March 9, 1999
    Assignees: Commissariat a l'Energie Atomique, Etat Francais
    Inventors: Etienne Quesnel, Jean-Yves Robic, Bernard Rolland, Jean Dijon