Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first isolation structure over a first end of a fin. A gate structure is over the fin and is spaced apart from the first isolation structure along the direction. A second isolation structure is over a second end of the fin, the second end opposite the first end. The second isolation structure is spaced apart from the gate structure. The first isolation structure and the second isolation structure both comprise a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material. The recessed second dielectric material laterally surrounds at least a portion of a third dielectric material different from the first and second dielectric materials.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first isolation structure over a first end of a fin. A gate structure is over the fin and is spaced apart from the first isolation structure along the direction. A second isolation structure is over a second end of the fin, the second end opposite the first end. The second isolation structure is spaced apart from the gate structure. The first isolation structure and the second isolation structure both comprise a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material. The recessed second dielectric material laterally surrounds at least a portion of a third dielectric material different from the first and second dielectric materials.

Abstract: A method for producing HIV maturation inhibitor compound is set forth using betulin as starting material, and utilizing Lossen rearrangement techniques.

Abstract: The present invention relates to crystalline forms of modified triterpenoid hydrochloride salts with HIV maturation inhibitor activity. More specifically, the present invention relates to the H-4, T1F-1, and T1F-2 crystalline forms. The present invention also relates to pharmaceutical compositions comprising these crystalline forms, as well as to methods of using these crystalline forms for the treatment of the HIV virus, and methods for obtaining these crystalline forms.

Abstract: A method for producing HIV maturation inhibitor compound is set forth using betulin as starting material, and utilizing Lossen rearrangement techniques.