Patents by Inventor Jeannet Bernard

Jeannet Bernard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optimised fabrication methods for a structure to be assembled by hybridisation and a device comprising such a structure
    Patent number: 11289439
    Abstract: A method of fabrication of a semiconducting structure intended to be assembled to a second support by hybridisation. The semiconducting structure comprising an active layer comprising a nitrided semiconductor. The method comprises a step for the formation of at least one first and one second insert and during this step, a nickel layer is formed in contact with the support surface, and a localised physico-chemical etching step of the active layer, a part of the active layer comprising the active region being protected by the nickel layer.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: March 29, 2022
    Assignee: COMMISSARIAT ÂL'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventor: Jeannet Bernard
  • Optimised fabrication methods for a structure to be assembled by hybridisation and a device comprising such a structure
    Publication number: 20200211989
    Abstract: A method of fabrication of a semiconducting structure intended to be assembled to a second support by hybridisation. The semiconducting structure comprising an active layer comprising a nitrided semiconductor. The method comprises a step for the formation of at least one first and one second insert and during this step, a nickel layer is formed in contact with the support surface, and a localised physico-chemical etching step of the active layer, a part of the active layer comprising the active region being protected by the nickel layer.
    Type: Application
    Filed: December 20, 2019
    Publication date: July 2, 2020
    Inventor: Jeannet Bernard