Abstract: A method and system for repairing defective memory in a semiconductor chip. The chip has memory locations, redundant memory, and a central location for ordered fuses. The ordered fuses identify in compressed format defective sections of the memory locations. The defective sections are replaceable by sections of the redundant memory. The ordered fuses have an associated a fuse bit pattern of bits which sequentially represents the defective sections in the compressed format. The method and system determines the order in which the memory locations are wired together; designs a shift register of latches through the memory locations in accordance with the order in which the memory locations are wired together; and associates each of the latches with a corresponding bit of an uncompressed bit pattern from which the fuse bit pattern is derived. The uncompressed bit pattern comprises a sequence of bits, representing the defective sections in uncompressed format.

Abstract: Macro design techniques are disclosed for facilitating subsequent stage wiring across the macro. Whitespace areas within the macro are rearranged to accommodate the wiring. The rearrangement may take the form of physical rearrangement of the whitespace areas into routing tracks extending from one side of the macro to another; shielding using, for example, macro power bussing and/or macro wiring; routing power busses to the rearranged whitespace; and/or inserting active circuits with pins accessible to the wiring. In a preferred embodiment, active circuits are placed into rearranged macro whitespace during the design of subsequent stages. The rearrangement of the whitespace facilitates the wiring across the macro so that slew rate and path delay requirements of the subsequent stage wiring can be maintained, without excessive buffering or rerouting of wiring.