Abstract: Integrated circuits including a MIMCAP device and methods of forming the integrated circuits are provided. An exemplary method of forming an integrated circuit including a MIMCAP device includes pre-determining a thickness of at least one of a bottom high-K layer or a top high-K layer of the MIMCAP device, followed by fabricating the MIMCAP device. The pre-determined thickness is established based upon a pre-determined TDDB lifetime for the MIMCAP device and a minimum target capacitance density at an applied voltage bias to be employed for the MIMCAP device. The MIMCAP device includes a bottom electrode and a dielectric layer disposed over the bottom electrode. The dielectric layer includes a stack of individual layers including the bottom high-K layer, the top high-K layer, and a lower-K layer sandwiched therebetween. At least one of the bottom high-K layer or the top high-K layer has the pre-determined thickness.

Abstract: Methods of using a nitride to protect source/drain regions during dummy gate removal and the resulting devices are disclosed. Embodiments include forming an oxide layer on a substrate; forming a nitride protection layer on the oxide layer; forming a dummy gate layer on the nitride protection layer; patterning the oxide, nitride, and dummy gate layers forming first and second dummy gate stacks on first and second portions of the substrate, each dummy gate stack comprising a dummy gate, the nitride protection layer, and the oxide layer, wherein a portion of the oxide layer extends along the substrate beyond side edges of the dummy gate; forming first and second source/drain cavities in the substrate at opposite sides of the first and second dummy gate stacks, respectively; growing first and second eSiGe source/drain regions in the first and second source/drain cavities, respectively; and removing the first dummy gate and the second dummy gate stack.

Abstract: Methods of using a nitride to protect source/drain regions during dummy gate removal and the resulting devices are disclosed. Embodiments include forming an oxide layer on a substrate; forming a nitride protection layer on the oxide layer; forming a dummy gate layer on the nitride protection layer; patterning the oxide, nitride, and dummy gate layers forming first and second dummy gate stacks on first and second portions of the substrate, each dummy gate stack comprising a dummy gate, the nitride protection layer, and the oxide layer, wherein a portion of the oxide layer extends along the substrate beyond side edges of the dummy gate; forming first and second source/drain cavities in the substrate at opposite sides of the first and second dummy gate stacks, respectively; growing first and second eSiGe source/drain regions in the first and second source/drain cavities, respectively; and removing the first dummy gate and the second dummy gate stack.

Abstract: Integrated circuits including a MIMCAP device and methods of forming the integrated circuits are provided. An exemplary method of forming an integrated circuit including a MIMCAP device includes pre-determining a thickness of at least one of a bottom high-K layer or a top high-K layer of the MIMCAP device, followed by fabricating the MIMCAP device. The pre-determined thickness is established based upon a pre-determined TDDB lifetime for the MIMCAP device and a minimum target capacitance density at an applied voltage bias to be employed for the MIMCAP device. The MIMCAP device includes a bottom electrode and a dielectric layer disposed over the bottom electrode. The dielectric layer includes a stack of individual layers including the bottom high-K layer, the top high-K layer, and a lower-K layer sandwiched therebetween. At least one of the bottom high-K layer or the top high-K layer has the pre-determined thickness.

Abstract: Methodologies and resulting devices are provided for modified FET threshold voltages. Embodiments include: providing an active region of a transistor on a semiconductor substrate; depositing a workfunction metal on the active region; and modifying a threshold voltage of the transistor by treating the workfunction metal with oxygen. Other embodiments include: providing first and second active regions in a semiconductor substrate for first and second transistors, respectively; forming a first workfunction metal on the first active region; forming a second workfunction metal on the second active region; and modifying a first threshold voltage level of the first transistor, a second threshold voltage level of the second transistor, or a combination thereof by treating the first workfunction metal, second workfunction metal, or a combination thereof with oxygen, wherein the second threshold voltage level is greater than the first threshold voltage level.

Abstract: The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption.

Abstract: The present invention relates to an improved preparation method of an organic-transition metal hydride as a hydrogen storage material, especially an improved preparation method of an organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reversible storage of a massive amount of hydrogen. The present invention also relates to a preparation method of an organic-transition metal hydride comprising the steps of: preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and a C10 to C20 aromatic compound in aprotic polar solvent; and preparing the organic-transition metal hydride by reacting the prepared complex reducing agent composition with an organic-transition metal halide in the absence of a hydrogen source.

Abstract: The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (M1H(n-1)) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption.

Abstract: The present invention relates to an advanced preparation method of organic-transition metal hydride used as hydrogen storage materials, the method including: preparing organic-transition metal-aluminum hydride complexes by reacting the organic-transition metal halide with metal aluminum hydride compounds; and preparing the organic-transition metal hydride by reacting the organic-transition metal aluminum hydride complexes with Lewis bases. Since the preparation method of the organic-transition metal hydride according to the present invention does not use catalysts, it has advantages that it does not cause problems due to poisoning and can prepare the organic-transition metal hydride at high yield under less stringent conditions. The hydrogen storage materials containing the organic-transition metal hydride prepared from the preparation method can safely and reversibly store a large amount of hydrogen.

Abstract: The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10˜C20) aromatic compound in aprotic polar solvent; and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic-transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

Abstract: The present invention relates to an organic-transition metal complex which can safely and reversibly store hydrogen in a high capacity, and a process for preparing the same. In order to achieve the objects, the hydrogen storage material according to the invention comprises a complex generated by combination of an organic substance containing a hydroxyl (—OH) group(s) with a transition metal containing compound, which can more effectively store hydrogen with more than one transition metal being bonded per molecule. Examples of the organic substances containing hydroxyl (—OH) group(s) include alkyl derivatives such as ethylene glycol, trimethylene glycol and glycerol, and hydroxyl-containing aryl derivatives such as fluoroglucinol. As the transition metal, titanium (Ti), vanadium (V) and scandium (Sc), which can make Kubas binding, may be mentioned.

Abstract: The present invention relates to an advanced preparation method of organic-transition metal hydride used as hydrogen storage materials, the method including: preparing organic-transition metal-aluminum hydride complexes by reacting the organic-transition metal halide with metal aluminum hydride compounds; and preparing the organic-transition metal hydride by reacting the organic-transition metal aluminum hydride complexes with Lewis bases. Since the preparation method of the organic-transition metal hydride according to the present invention does not use catalysts, it has advantages that it does not cause problems due to poisoning and can prepare the organic-transition metal hydride at high yield under less stringent conditions. The hydrogen storage materials containing the organic-transition metal hydride prepared from the preparation method can safely and reversibly store a large amount of hydrogen.

Abstract: A plurality of cooling units for cooling electrical components can be disposed in close proximity to one another in confined spaces with minimal space conflict, due to the design of the cooling units that allows for staggered position of connection fittings. Also, the cooling units can be selectively arranged in a plurality of configurations with respect to one another, while being fluidly connected.