Patents by Inventor Jebas Paul Daniel T

Jebas Paul Daniel T has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11313702
    Abstract: A system and method for monitoring analog front-end (AFE) circuitry of an inductive position sensor. A redundant AFE channel is provided and alternatively utilized with a sine AFE channel or a cosine AFE channel of the AFE circuitry to obtain a voltage difference that may result in a detection angle error at the electronic control unit (ECU) of the inductive position sensor.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: April 26, 2022
    Assignee: Microchip Technology Inc.
    Inventors: Stephane Le Goff, Mathieu Sureau, Jebas Paul Daniel T, Naveen Cannankurichi, Subhasis Sasmal, Sunny Joel
  • Publication number: 20220034684
    Abstract: A system and method for monitoring analog front-end (AFE) circuitry of an inductive position sensor. A redundant AFE channel is provided and alternatively utilized with a sine AFE channel or a cosine AFE channel of the AFE circuitry to obtain a voltage difference that may result in a detection angle error at the electronic control unit (ECU) of the inductive position sensor.
    Type: Application
    Filed: October 20, 2020
    Publication date: February 3, 2022
    Applicant: Microchip Technology Inc.
    Inventors: Stephane Le Goff, Mathieu Sureau, Jebas Paul Daniel T, Naveen Cannankurichi, Subhasis Sasmal, Sunny Joel
  • Patent number: 10761549
    Abstract: Various electronics systems may benefit from appropriate limitation of short-to-ground current. For example, sensor systems may benefit from a voltage sensing mechanism to minimize short-to-ground current for low drop-out and bypass mode regulators. A system can include a first power transistor configured to operate in a low drop-out mode. The system can also include a short to ground sensor configured to control current to the first power transistor. The short to ground sensor can be configured to limit a maximum short-circuit current below a predefined load current capability.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: September 1, 2020
    Assignee: Microsemi Corporation
    Inventors: Subhasis Sasmal, Jebas Paul Daniel T, Naveen Cannankurichi, Bernard Drexler
  • Publication number: 20180196453
    Abstract: Various electronics systems may benefit from appropriate limitation of short-to-ground current. For example, sensor systems may benefit from a voltage sensing mechanism to minimize short-to-ground current for low drop-out and bypass mode regulators. A system can include a first power transistor configured to operate in a low drop-out mode. The system can also include a short to ground sensor configured to control current to the first power transistor. The short to ground sensor can be configured to limit a maximum short-circuit current below a predefined load current capability.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 12, 2018
    Applicant: Microsemi Corporation
    Inventors: Subhasis Sasmal, Jebas Paul Daniel T, Naveen Cannankurichi, Bernard Drexler