Abstract: Portable device (1) for producing hydrogen from a hydrogen precursor and a liquid, this device comprising—a main chamber (2), intended for receiving said hydrogen precursor and said liquid, —an additional chamber (6), intended for collecting the hydrogen thus produced, —a separation membrane (5), defining said main chamber relative to said additional chamber, —means (8) for discharging the hydrogen out of the additional chamber, and characterized in that it comprises heat exchange means (21), provided on at least one portion of the periphery of said main chamber. This device produces pure hydrogen which may supply a fuel cell.

Abstract: A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.

Abstract: A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.

Abstract: The device for melting and purifying of a silicon feedstock comprises a crucible arranged inside a sealed chamber. A thermal gradient can be applied to the crucible by an arranged heat exchanger and a heating device. The device likewise comprises a device for reducing the pressure inside the chamber to a value lower than 10?2 mbar and a device for stirring the silicon in the crucible. The silicon feedstock successively undergoes degassing and pre-heating to atmospheric temperature, and then melting and low pressure, high temperature purification. Once the low-pressure purification step has been completed, directed crystallization is carried out.

Abstract: Production of photovoltaic grade crystalline silicon is achieved by crystallization of a molten silicon feedstock, the sum of the initial donor doping element and acceptor doping element concentrations whereof is greater than 0.1 ppma, and both the acceptor and donor doping element concentrations whereof are less than 25 ppma. At least a predefined quantity of a doping material having a segregation coefficient of less than 0.1 is added to the feedstock. This addition enables a crystallized silicon to be produced the difference between the donor and acceptor doping profiles whereof is comprised between 0.1 and 5 ppma over at least 50% of the solidified silicon. A silicon presenting a concentration of at least one of the dopants is greater than or equal to 5 ppma and a difference less than or equal to 5 ppma between these two types of dopant is integrated in a photovoltaic cell.