Abstract: The present invention relates to a low cost method of fabricating capacitors within tight tolerance ranges. The method involves forming, by vapor deposition or the like, discrete electrode areas on an insulating substrate, and depositing a dielectric layer over the substrate and the areas between the electrodes. A further series of electrode are formed over the dielectric in partial registry with the first mentioned electrodes, and the substrate is thereafter diced to expose opposed edge portions of the resultant capacitors. The capacitors are terminated preferably by a sputtering technique, the sputtered material being insulated from contact with the edge portions of non-exposed electrodes by the deposited dielectric.

Abstract: End point detection in developing photoresist is accomplished by monitoring the output of a photodetector and sensing a plateau in the output.

Abstract: End point detection in developing photoresist is accomplished by monitoring the output of a photodetector and sensing a plateau in the output.

Abstract: After exposure to radiation photoresist may be developed by a dry process using a gas plasma, preferably an oxygen plasma. The process can be used for chemical milling, photolithography, printed circuit board and photomask manufacture and it is particularly advantageous in the manufacture of semiconductors. The plasma development process can be followed by plasma etch and strip processes without requiring removal of the work piece from the plasma reactor.