Abstract: Autonomous software controller adaptation is performed by generating a software controller by arranging a first sequence of modular functions according to a controller specification, the controller specification indicating a software controller input, a software controller output, and a utility function, applying an experiment to the software controller to obtain a utility value, indicating whether the software controller is a candidate controller for operation based on the utility value, and replacing an operating controller with the candidate controller in response to a condition for replacing the operating controller being satisfied.

Abstract: Disclosed herein are a video decoding method and apparatus and a video encoding method and apparatus. Coding decision information of a representative channel of a target block is shared as coding decision information of a target channel of the target block, and decoding of the target block is performed using the coding decision information of the target channel. Since the coding decision information of the representative channel is shared with an additional channel, repeated signaling of identical coding decision information may be prevented. By means of this prevention, the efficiency of encoding and decoding of the target block or the like may be improved.

Abstract: A method of workload management in a Kubernetes (K8s) environment may include obtaining, by a digital twin (DT) representing a cluster state, performance data of at least one K8s cluster, generating, by the DT, a behavioral model based on the performance data, determining, by a horizontal pod autoscaler (HPA) controller, a HPA configuration based on the behavioral model and implementing, by an HPA of the at least one K8s cluster, the determined HPA configuration

Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: A method of fabricating a semiconductor device, including performing the following steps in the following sequence: providing a substrate including first and second gate regions separated by a trench formed in the substrate and growing a thin oxide layer on each of the first and second gate regions. The method further includes removing the thin oxide layer from the second gate region, and growing a thick oxide layer on the second gate region.

Abstract: A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

Abstract: A method of fabricating a semiconductor device with Shallow Trench Isolation (STI) includes performing the following steps in the following sequence: providing a substrate comprising first and second gate regions separated by a trench formed in the substrate, wherein the trench is filled with an STI material. The method further includes depositing a sacrificial polysilicon layer covering the STI material; growing a thick oxide layer on the first and second gate regions; removing the thick oxide layer from the first gate region while leaving the thick oxide layer in the second gate region.

Abstract: A method of fabricating a semiconductor device, including performing the following steps in the following sequence: providing a substrate including first and second gate regions separated by a trench formed in the substrate and growing a thin oxide layer on each of the first and second gate regions. The method further includes removing the thin oxide layer from the second gate region, and growing a thick oxide layer on the second gate region.

Abstract: A method of fabricating a semiconductor device with Shallow Trench Isolation (STI) includes performing the following steps in the following sequence: providing a substrate comprising first and second gate regions separated by a trench formed in the substrate, wherein the trench is filled with an STI material. The method further includes depositing a sacrificial polysilicon layer covering the STI material; growing a thick oxide layer on the first and second gate regions; removing the thick oxide layer from the first gate region while leaving the thick oxide layer in the second gate region.

Abstract: A linear EMV actuator uses a permanent magnet and an electromagnet in which EMV operation for opening/closing an exhaust valve and an intake valve makes valve operations linear. As a result, the valve undergoes a soft landing and active control of an amount of opening of the valve. The linear EMV actuator includes an upper core and a lower core, an armature, an actuator spring and a valve spring. Also included are a permanent magnet, an upper coil and a lower coil connected to each other in series thereby forming one electromagnet, a displacement sensor, and a position controller.