Abstract: A semiconductor device having simplicity in design and improved performance and methods for fabricating the same are provided. The semiconductor device includes a substrate including a frontside and a backside opposite the frontside, an electronic device on the frontside of the substrate, an interlayer insulating layer covering the electronic device, a frontside wiring structure on the interlayer insulating layer, a backside wiring structure on the backside of the substrate, and at least one unit chain connecting the electronic device with the backside wiring structure, the unit chain including a through plug passing through the substrate, a connection contact on the interlayer insulating layer, a first chain plug passing through the interlayer insulating layer to connect the through plug with the connection contact, and a second chain plug passing through the interlayer insulating layer to be connected to the through plug.

Abstract: A solid ion conductor including a garnet oxide represented by Formula 1: L5+x+2y(Dy,E3-y)(Mez,M2-z)Od??Formula 1 wherein L is at least one of a monovalent cation or a divalent cation, D is a monovalent cation, E is a trivalent cation, Me and M are each independently a trivalent, tetravalent, pentavalent, or a hexavalent cation, 0<x+2y?3, 0?y?0.5, 0?z<2, and 0<d?12, wherein O is partially or totally substituted with at least one of a pentavalent anion, a hexavalent anion, or a heptavalent anion; and B2O3.

Abstract: A solid ion conductor including a garnet oxide represented by Formula 1: L5+x+2y(Dy,E3-y)(Mez,M2-z)Od??Formula 1 wherein L is at least one of a monovalent cation or a divalent cation, D is a monovalent cation, E is a trivalent cation, Me and M are each independently a trivalent, tetravalent, pentavalent, or a hexavalent cation, 0<x+2y?3, 0?y?0.5, 0?z<2, and 0<d?12, wherein O is partially or totally substituted with at least one of a pentavalent anion, a hexavalent anion, or a heptavalent anion; and B2O3.