Patents by Inventor Jee Sung Yoon

Jee Sung Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6078069
    Abstract: A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area,an insulating layer formed between the first, second, third and fourth poly gates, a first clock signal applied to the first and second poly gates, a second clock signal applied to the third and fourth poly gates, and a biasing circuit for selectively applying a bias signal to the first and second clock signals so as to selectively change a charge transfer direction.
    Type: Grant
    Filed: January 14, 1998
    Date of Patent: June 20, 2000
    Assignee: LG Semicon Co, Ltd.
    Inventors: Jee Sung Yoon, Il Nam Hwang
  • Patent number: 5869855
    Abstract: A charge-coupled device including, a light-receiving part having a glass and receiving an image, a photo chromic layer formed on the glass and being progressively colored according to a level of brightness of the image, to control an amount of transmitted light such that the amount of light transmitted for bright parts and dark parts of an image are substantially equalized, and a frame located on sides of the light receiving part.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: February 9, 1999
    Assignee: LG Semicon Co., Ltd.
    Inventors: Jee Sung Yoon, Hyeong Ik Yun
  • Patent number: 5773324
    Abstract: A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area, an insulating layer formed between the first, second, third and fourth poly gates, a first clock signal applied to the first and second poly gates, a second clock signal applied to the third and fourth poly gates, and a biasing circuit for selectively applying a bias signal to the first and second clock signals so as to selectively change a charge transfer direction.
    Type: Grant
    Filed: July 30, 1996
    Date of Patent: June 30, 1998
    Assignee: LG Semicon Co., Ltd.
    Inventors: Jee Sung Yoon, Il Nam Hwang