Abstract: A method for counting coughs is provided. The method includes acquiring a plurality of onset signals from the sound signal, wherein the onset signal has a predetermined time length; acquiring a plurality of spectrograms corresponding to each of the plurality of onset signals; determining whether each of the acquired plurality of spectrograms represents a cough using a cough determination model; and calculating a number of coughs included in the sound signal based on a time point of a cough signal. The cough signal is an onset signal corresponding to one spectrogram determined to represent the cough. When a time interval between a first time point of a first cough signal and a second time point of a second cough is within a reference time interval, the first cough signal and the second cough signal are regarded as one cough signal at the first time point.

Abstract: In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.

Abstract: In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline.

Abstract: NAND flash memory device includes a common bit line, a first cell string including a first string selecting transistor having a first gate length, a second string selecting transistor having a second gate length, first cell transistors each having a third gate length and a first ground selecting transistor having a fourth gate length, a second cell string including a third string selecting transistor having the first gate length, a fourth string selecting transistor having the second gate length, second cell transistors each having the third gate length and a second ground selecting transistor having the fourth gate length and a common source line commonly connected to end portions of the first and second ground selecting transistors included in the first and second cell strings. At least one of the first gate length and the second gate length is smaller than the fourth gate length.