Abstract: A resist underlayer polymer, a resist underlayer composition including the same, and a method of patterning using the same, the resist underlayer polymer including a repeating unit represented by at least one of Chemical Formula 1 and Chemical Formula 2:

Abstract: A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1:

Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:

Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:

Abstract: An aromatic ring-containing polymer, an underlayer composition including the same, and associated methods, the aromatic ring-containing polymer including a group represented by one of the following Chemical Formulae 1-1, 1-2, 2-1, and 2-2:

Abstract: An aromatic ring-containing compound for a resist underlayer and a resist underlayer composition, the aromatic ring-containing compound being represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, R1 to R6 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C5 to C20 aromatic ring group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, or a substituted or unsubstituted C2 to C20 heterocycloalkyl group, X1 to X6 are each independently hydrogen, a hydroxy group (—OH), a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted alkoxy group, or an amino group (—NH2), n1 to n6 are each independently 0 or 1, and 1?n1+n2+n3+n4+n5+n6?6.

Abstract: An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.

Abstract: An aromatic ring-containing polymer for an underlayer of a resist, including a unit structure represented by Chemical Formula 1:

Abstract: An aromatic ring-containing polymer for an underlayer of a resist, including a unit structure represented by Chemical Formula 1:

Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:

Abstract: A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1:

Abstract: A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:

Abstract: A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: wherein m and n satisfy the relations 1?m<190, 0?n<190, and 1?m+n<190.

Abstract: An aromatic ring-containing polymer, an underlayer composition including the same, and associated methods, the aromatic ring-containing polymer including a group represented by one of the following Chemical Formulae 1-1, 1-2, 2-1, and 2-2:

Abstract: An aromatic ring-containing compound for a resist underlayer and a resist underlayer composition, the aromatic ring-containing compound being represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, R1 to R6 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C5 to C20 aromatic ring group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, or a substituted or unsubstituted C2 to C20 heterocycloalkyl group, X1 to X6 are each independently hydrogen, a hydroxy group (—OH), a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted alkoxy group, or an amino group (—NH2), n1 to n6 are each independently 0 or 1, and 1?n1+n2+n3+n4+n5+n6?6.

Abstract: A resist underlayer polymer, a resist underlayer composition including the same, and a method of patterning using the same, the resist underlayer polymer including a repeating unit represented by at least one of Chemical Formula 1 and Chemical Formula 2:

Abstract: An aromatic ring-containing polymer for a resist underlayer, the polymer including a unit represented by the following Chemical Formula 1: wherein, R1 and R2 are independently hydrogen, a C1 to C10 alkyl group, or an aromatic group, A is a functional group derived from an aromatic compound with a heteroatom or without a heteroatom, and n is an integer of one or more.

Abstract: A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: wherein m and n satisfy the relations 1?m<190, 0?n<190, and 1?m+n<190.