Patents by Inventor JEEHON HAN

JEEHON HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230262984
    Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.
    Type: Application
    Filed: April 24, 2023
    Publication date: August 17, 2023
    Inventors: HYOJOON RYU, KWANYONG KIM, SEOGOO KANG, SUNIL SHIM, WONSEOK CHO, JEEHON HAN
  • Patent number: 11637117
    Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: April 25, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyojoon Ryu, Kwanyong Kim, Seogoo Kang, Sunil Shim, Wonseok Cho, Jeehon Han
  • Publication number: 20210288054
    Abstract: A semiconductor device includes; a memory stack disposed on a substrate and including a lower gate electrode, an upper gate stack including a string selection line, a vertically extending memory gate contact disposed on the lower gate electrode, and a vertically extending selection line stud disposed on the string selection line. The string selection line includes a material different from that of the lower gate electrode, and the selection line stud includes a material different from that of the memory gate contact.
    Type: Application
    Filed: September 25, 2020
    Publication date: September 16, 2021
    Inventors: HYOJOON RYU, KWANYONG KIM, SEOGOO KANG, SUNIL SHIM, WONSEOK CHO, JEEHON HAN