Patents by Inventor JeeHoo PARK

JeeHoo PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150041916
    Abstract: A co-implant concentration of a source region of a pull-down transistor is higher than those of other co-implant concentrations. Thus, dopants in a halo region of the source region may be prevented from excessively being diffused into a channel region during a post annealing process. As a result, dispersion of saturation threshold voltages of unit memory cells may be reduced.
    Type: Application
    Filed: August 8, 2013
    Publication date: February 12, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Cheong Sik YU, Cheolhwyi BAE, JeeHoo PARK, Seung Chul LEE