Abstract: A method of forming a color filter array. A substrate having a passivation layer thereon is provided. A negative color photoresist layer is formed over the passivation layer. A photolithographic exposure process is conducted using a light source with a wavelength less than or equal to 248 nm so that a pattern for forming a color filter array is imprinted on the negative color photoresist layer.

Abstract: A method of forming a color filter array. A substrate having a passivation layer thereon is provided. A negative color photoresist layer is formed over the passivation layer. A photolithographic exposure process is conducted using a light source with a wavelength less than or equal to 248 nm so that a pattern for forming a color filter array is imprinted on the negative color photoresist layer.

Abstract: A method for improving alignment precision in forming a color filter array is disclosed. This method comprises providing a substrate having a node region in the substrate and a dielectric layer on the substrate, and etching a portion of the dielectric layer to expose the node region. As a result, the alignment precision is improved by use of the node region with enhanced step height to increase the intensity of signal in a semiconductor process.

Abstract: A semiconductor image sensor includes a bonding pad formed on a semiconductor substrate. An oxide layer is disposed over the semiconductor substrate to cover the bonding pad. A SOG is disposed on the oxide layer, a silicon-oxy-nitride layer is disposed on the SOG and a color filter is disposed thereon. By using the high transmittance of the SOG and the silicon-oxy-nitride layer, the blue light transmittance by the semiconductor image sensor is therefore enhanced.

Abstract: The invention proposes a method of predicting the curvature radius of the microlens. By adjusting a spin speed of spin coating and exposure energy during a photolithography step, a volume of the patterned microlens material layer is controlled. Then a lens-forming step is performed to transform the patterned microlens material layer into a microlens. After measuring a diameter of the microlens, the volume of the microlens material layer is multiplied by a contraction coefficient to calculate a volume of the microlens. Then the diameter and the volume of the microlens are used to calculate a curvature radius.

Abstract: A semiconductor image sensor includes a metal layer formed on a semiconductor substrate. An oxide layer is disposed over the semiconductor substrate to cover the metal layer. A SOG is disposed on the oxide layer, a color filter is disposed on the SOG and a silicon-oxy-nitride layer is disposed thereon. By using the high transmittance of the SOG and the silicon-oxy-nitride layer, the blue light transmittance by the semiconductor image sensor is therefore enhanced.