Abstract: A method includes depositing a first layer including amorphous silicon on a surface of a substrate; depositing a second layer including metal on the first layer; and performing an annealing process at a temperature within a range of 70° C. to 200° C., thereby inducing a silicidation reaction between the first layer and the second layer and forming a third layer comprising a metal silicide in electrical contact with the substrate, resulting in a remaining part of the first layer being between the substrate and the third layer.

Abstract: The disclosed technology generally relates to silicon solar cells and more particularly to a doped layer formed on a textured surface of a silicon solar cell, and methods of fabricating the same. In one aspect, a method of creating a doped layer at a rear side of a crystalline silicon bifacial solar cell is disclosed. The method can include texturing at least a rear side of a silicon substrate of the solar cell to create a pattern of pyramids, thereby creating a pyramidal topology of the rear side. The method can also include forming a doped layer at the rear side by, using epitaxial growth, growing at least one doped silicon epitaxial layer on the pyramids. Simultaneously with forming the doped layer and by using facet evolution, the pyramidal topology of the rear side can be smoothed by the growth of the at least one epitaxial layer.

Abstract: Example embodiments relate to selective deposition for interdigitated patterns in solar cells. One embodiment includes a method for creating an interdigitated pattern for a solar cell. The method includes providing a substrate of the solar cell. A surface of the substrate includes one or more exposed regions and one or more regions covered by a patterned first passivation layer stack protected by a hard mask. The method also includes selectively depositing a second passivation layer stack that includes at least a first layer of amorphous silicon (a-Si) on the one or more exposed regions such that the first passivation layer stack and the second passivation layer stack form the interdigitated pattern. Selectively depositing the second passivation layer stack includes adding a sublayer of the first layer on the hard mask, etching the added sublayer on the hard mask, and cleaning a surface of the remaining added sublayer.

Abstract: A method is provided for creating an interdigitated pattern for a back-contacted solar cell, including deposition of a first passivation layer stack including a-Si of a first doping type, patterning the first passivation layer stack by using a first dry etching process to create one or more regions including the a-Si of the first doping type and one or more exposed regions of the surface, cleaning the one or more exposed regions of the surface from contaminants remaining from the first dry etching process, and depositing a second passivation layer stack including a-Si of a second doping type different from the first doping type to create the interdigitated pattern together with the patterned first passivation layer stack. The cleaning may include depositing a sacrificial layer at least on the exposed regions of the surface, and removing the sacrificial layer by a second dry etching process, at a temperature not exceeding 250° C.

Abstract: A method includes depositing a first layer including amorphous silicon on a surface of a substrate; depositing a second layer including metal on the first layer; and performing an annealing process at a temperature within a range of 70° C. to 200° C., thereby inducing a silicidation reaction between the first layer and the second layer and forming a third layer comprising a metal silicide in electrical contact with the substrate, resulting in a remaining part of the first layer being between the substrate and the third layer.

Abstract: The disclosed technology generally relates to silicon solar cells and more particularly to a doped layer formed on a textured surface of a silicon solar cell, and methods of fabricating the same. In one aspect, a method of creating a doped layer at a rear side of a crystalline silicon bifacial solar cell is disclosed. The method can include texturing at least a rear side of a silicon substrate of the solar cell to create a pattern of pyramids, thereby creating a pyramidal topology of the rear side. The method can also include forming a doped layer at the rear side by, using epitaxial growth, growing at least one doped silicon epitaxial layer on the pyramids. Simultaneously with forming the doped layer and by using facet evolution, the pyramidal topology of the rear side can be smoothed by the growth of the at least one epitaxial layer.

Abstract: Example embodiments relate to selective deposition for interdigitated patterns in solar cells. One embodiment includes a method for creating an interdigitated pattern for a solar cell. The method includes providing a substrate of the solar cell. A surface of the substrate includes one or more exposed regions and one or more regions covered by a patterned first passivation layer stack protected by a hard mask. The method also includes selectively depositing a second passivation layer stack that includes at least a first layer of amorphous silicon (a-Si) on the one or more exposed regions such that the first passivation layer stack and the second passivation layer stack form the interdigitated pattern. Selectively depositing the second passivation layer stack includes adding a sublayer of the first layer on the hard mask, etching the added sublayer on the hard mask, and cleaning a surface of the remaining added sublayer.

Abstract: A method is provided for creating an interdigitated pattern for a back-contacted solar cell, including deposition of a first passivation layer stack including a-Si of a first doping type, patterning the first passivation layer stack by using a first dry etching process to create one or more regions including the a-Si of the first doping type and one or more exposed regions of the surface, cleaning the one or more exposed regions of the surface from contaminants remaining from the first dry etching process, and depositing a second passivation layer stack including a-Si of a second doping type different from the first doping type to create the interdigitated pattern together with the patterned first passivation layer stack. The cleaning may include depositing a sacrificial layer at least on the exposed regions of the surface, and removing the sacrificial layer by a second dry etching process, at a temperature not exceeding 250 ° C.

Abstract: A method is provided for calculating a performance of a photovoltaic module comprising at least a first photovoltaic cell and a second photovoltaic cell. The method comprises calculating a heat flow between the first photovoltaic cell and the second photovoltaic cell using a first thermal equivalent circuit of the first photovoltaic cell and a second thermal equivalent circuit of the second photovoltaic cell, wherein at least one node of the first thermal equivalent circuit is connected to a corresponding node of the second thermal equivalent circuit by a thermal coupling resistance. The method may be used for calculating the influence of spatial and temporal variations in the operation conditions on the performance, such as the energy yield, of a photovoltaic module or a photovoltaic system.

Abstract: The disclosed technology generally relates to photovoltaic devices and more particularly to back contact photovoltaic devices, and to methods of fabricating back contact photovoltaic devices. In one aspect, a back contact photovoltaic cell includes an n-type silicon substrate having formed on a rear side first layer stacks formed at first locations and second layer stacks formed at second locations different from and non-overlapping with the first locations. Each of the first layer stacks includes a passivating tunneling layer and a first transparent conductive layer having a first work function, where the first transparent conductive layer induces an inversion region in the n-type silicon substrate at a corresponding one of the first locations, where the inversion region forms an emitter region of the back contact photovoltaic cell.

Abstract: A method is provided for calculating a performance of a photovoltaic module comprising at least a first photovoltaic cell and a second photovoltaic cell. The method comprises calculating a heat flow between the first photovoltaic cell and the second photovoltaic cell using a first thermal equivalent circuit of the first photovoltaic cell and a second thermal equivalent circuit of the second photovoltaic cell, wherein at least one node of the first thermal equivalent circuit is connected to a corresponding node of the second thermal equivalent circuit by a thermal coupling resistance. The method may be used for calculating the influence of spatial and temporal variations in the operation conditions on the performance, such as the energy yield, of a photovoltaic module or a photovoltaic system.

Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal, e.g., aluminum, is then formed on the passivation layer. The structure is heated so that the germanium surface makes contact with the contact layer. The aluminum contact layer can be configured for use as a mirroring surface for the back surface of the device. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

Abstract: The present invention is related to a multi-junction photovoltaic module comprising a first photovoltaic sub-module and a second photovoltaic sub-module stacked on the first photovoltaic sub-module, wherein the first photovoltaic sub-module comprises a plurality of first photovoltaic sub-cells that are monolithically integrated on a first substrate and wherein the second photovoltaic sub-module comprises a plurality of second photovoltaic sub-cells that are monolithically integrated on a second substrate; the plurality of first photovoltaic sub-cells is substantially identical; the plurality of second photovoltaic sub-cells is substantially identical; the plurality of first photovoltaic sub-cells is electrically connected in series; the plurality of second photovoltaic sub-cells is electrically connected in series; the first photovoltaic sub-module and the second photovoltaic sub-module are electrically connected in parallel.

Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

Abstract: Methods for manufacturing electronic devices and devices produced by those methods are disclosed. One such method includes releasably bonding a first surface of a device substrate to a face of a first carrier substrate using a first bonding agent to produce a first composite substrate, where the face of the first carrier substrate includes a pattern of trenches. The method also includes processing the device substrate to manufacture an electronic device on a second surface of the device substrate. The method further includes releasing the device substrate from the first carrier substrate by a releasing agent.

Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.

Abstract: The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.

Abstract: A method for the production of a photovoltaic device is disclosed. In one aspect, the method comprises providing a carrier substrate. The method further comprises forming a crystalline semiconductor layer on the substrate. The method further comprises carrying out hydrogen passivation of the crystalline semiconductor layer. The method further comprises creating an emitter on the surface of the passivated crystalline semiconductor layer.

Abstract: A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.