Abstract: The invention includes an assembly (130) having a physical vapor deposition target (102) separated from a backing plate (120) with a layer (104) consisting essentially of one or both of molybdenum and tantalum. The invention also includes an assembly comprising a backing plate of at least 99.9% aluminum bound to a target of at least 99.9% molybdenum through a bond having a strength of at least about 6,000 pounds per square inch (psi). Additionally, the invention includes a method of bonding a tungsten-containing material to an aluminum-containing material. A layer of molybdenum-containing material (104) is provided between the tungsten-containing material (102) and the aluminum-containing material (120); and is bonded to both the tungsten-containing material (102) and the aluminum-containing material (120).

Abstract: The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.

Abstract: The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.