Abstract: Systems and methods provide for an intelligent laboratory lockbox. The intelligent laboratory lockbox includes a vault unit and one or more presence sensors configured to detect a presence of a specimen within the one or more compartments of the vault unit. The presence sensor(s) may generate a load status based on sensing a specimen in the vault unit, wherein the load status includes one of a loaded status or an unloaded status. A control unit is operably connected to at least the vault unit and the one or more presence sensors. The control unit is configured to modify a specimen pickup workflow based on the load status.

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract: Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component-side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: A light sensor having a chemically resistant and robust reflector stack is disclosed. The reflector stack is formed over a substrate, and includes an adhesion layer, a patterned reflector layer over the adhesion layer, and a smoothing layer over the patterned reflector layer. The patterned reflector layer has a substantially flat top surface. A conformal passivation layer covers the reflector stack. An absorbing layer is situated above the reflector stack and separated from the reflector stack. The absorbing layer is supported by vias over the substrate. The absorbing layer is connected to at least one resistor, where a resistance of the at least one resistor varies in response to light absorbed by the absorbing layer. The vias are disposed on via landing pads on the substrate.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a trench over the MEMS plate, forming an oxide liner in the trench on sidewalls of the trench, forming a metal liner over the oxide liner in the trench, and depositing a metallic filler in the trench to form a via. The method further includes removing the polymer layer such that the via and the MEMS plate form the self-supported MEMS structure, where the oxide liner provides mechanical rigidity for the metallic filler of the via. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.

Abstract: Disclosed herein are processes for continuously bagging pellets. The pellets can be formed from a tacky and/or polymer-containing formulation. Other embodiments relate to systems for continuously bagging pellets. Still other embodiments related the individual components of the processes and systems for continuously bagging pellets.

Abstract: A continuous process wherein a mechanized and automated feeding system provides precision delivery of thermally and atmospherically conditioned components to a pelletization process including extrusion, pelletization, thermal processing, drying, and post-processing of the polymeric pellets formed. The components can be combined to form solutions, dispersions, emulsions, formulations, and the like. These components can further be reacted and thermally modified to form oligomers, pre-polymers, polymers, copolymers, and many combinations thereof.

Abstract: Disclosed herein are processes for continuously bagging pellets. The pellets can be formed from a tacky and/or polymer-containing formulation. Other embodiments relate to systems for continuously bagging pellets. Still other embodiments related the individual components of the processes and systems for continuously bagging pellets.

Abstract: A continuous process wherein a mechanized and automated feeding system provides precision delivery of thermally and atmospherically conditioned components to a pelletization process including extrusion, pelletization, thermal processing, drying, and post-processing of the polymeric pellets formed. The components can be combined to form solutions, dispersions, emulsions, formulations, and the like. These components can further be reacted and thermally modified to form oligomers, pre-polymers, polymers, copolymers, and many combinations thereof.

Abstract: Information handling system errors are presented at a display with the information handling system graphics subsystem inoperative by communicating an identified error to the display through an auxiliary channel and generating a presentation of the error information with a microcontroller of the display. For example, errors determined by BIOS firmware running on a chipset are communicated through a DDC or I2C channel from the chipset to the display so that textual error messages are generated at the display without the use of the information handling system's graphic processor to generate an error message image.

Abstract: Information handling system errors are presented at a display with the information handling system graphics subsystem inoperative by communicating an identified error to the display through an auxiliary channel and generating a presentation of the error information with a microcontroller of the display. For example, errors determined by BIOS firmware running on a chipset are communicated through a DDC or I2C channel from the chipset to the display so that textual error messages are generated at the display without the use of the information handling system's graphic processor to generate an error message image.